We propose a novel method of precisely measuring the polarization dependence of single pass gain (PDG) in a semiconductor optical amplifier integrated with spot-size convertors (SS-SOA). By averaging the signal gain of a SS-SOA over a wide wavelength range using the amplified spontaneous emission (ASE) of an erbium doped fiber (EDF), the PDG can be accurately estimated. This is because the influence of gain ripples on the measurement results are drastically reduced. We successfully evaluated the PDG of an angled-facet SS-SOA, even before the process of anti-reflection coating, within a small error of 0.5dB. The EDF-ASE technique is useful in sampling tests and selecting angled-facet SS-SOA chips from wafers. The polarization dependence of the coupling efficiency (PDCE) between a SS-SOA and optical fiber is also evaluated by measuring the photo-current of the active layer for TE and TM input signals. It is possible, therefore, to specify the polarization characteristics of the active region and spot-size converter region, which are indispensable parameters for the design of the SS-SOA.