Novel Methods of Estimating Polarization Dependence in Semiconductor Optical Amplifiers Integrated with Spot-Size Convertors

Toshio ITO; Katsuaki MAGARI; Yasuo SHIBATA; Yoshihiro KAWAGUCHI; Yasuhiro KONDO; Yuichi TOHMORI; Yasuhiro SUZUKI

Novel Methods of Estimating Polarization Dependence in Semiconductor Optical Amplifiers Integrated with Spot-Size Convertors

Toshio ITO, Katsuaki MAGARI, Yasuo SHIBATA, Yoshihiro KAWAGUCHI, Yasuhiro KONDO, Yuichi TOHMORI, Yasuhiro SUZUKI

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We propose a novel method of precisely measuring the polarization dependence of single pass gain (PDG) in a semiconductor optical amplifier integrated with spot-size convertors (SS-SOA). By averaging the signal gain of a SS-SOA over a wide wavelength range using the amplified spontaneous emission (ASE) of an erbium doped fiber (EDF), the PDG can be accurately estimated. This is because the influence of gain ripples on the measurement results are drastically reduced. We successfully evaluated the PDG of an angled-facet SS-SOA, even before the process of anti-reflection coating, within a small error of 0.5dB. The EDF-ASE technique is useful in sampling tests and selecting angled-facet SS-SOA chips from wafers. The polarization dependence of the coupling efficiency (PDCE) between a SS-SOA and optical fiber is also evaluated by measuring the photo-current of the active layer for TE and TM input signals. It is possible, therefore, to specify the polarization characteristics of the active region and spot-size converter region, which are indispensable parameters for the design of the SS-SOA.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.5 pp.831-837

Publication Date: 2003/05/01

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Type of Manuscript: PAPER

Category: Lasers, Quantum Electronics

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Toshio ITO, Katsuaki MAGARI, Yasuo SHIBATA, Yoshihiro KAWAGUCHI, Yasuhiro KONDO, Yuichi TOHMORI, Yasuhiro SUZUKI, "Novel Methods of Estimating Polarization Dependence in Semiconductor Optical Amplifiers Integrated with Spot-Size Convertors" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 5, pp. 831-837, May 2003, doi: .
Abstract: We propose a novel method of precisely measuring the polarization dependence of single pass gain (PDG) in a semiconductor optical amplifier integrated with spot-size convertors (SS-SOA). By averaging the signal gain of a SS-SOA over a wide wavelength range using the amplified spontaneous emission (ASE) of an erbium doped fiber (EDF), the PDG can be accurately estimated. This is because the influence of gain ripples on the measurement results are drastically reduced. We successfully evaluated the PDG of an angled-facet SS-SOA, even before the process of anti-reflection coating, within a small error of 0.5dB. The EDF-ASE technique is useful in sampling tests and selecting angled-facet SS-SOA chips from wafers. The polarization dependence of the coupling efficiency (PDCE) between a SS-SOA and optical fiber is also evaluated by measuring the photo-current of the active layer for TE and TM input signals. It is possible, therefore, to specify the polarization characteristics of the active region and spot-size converter region, which are indispensable parameters for the design of the SS-SOA.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_5_831/_p

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@ARTICLE{e86-c_5_831,
author={Toshio ITO, Katsuaki MAGARI, Yasuo SHIBATA, Yoshihiro KAWAGUCHI, Yasuhiro KONDO, Yuichi TOHMORI, Yasuhiro SUZUKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Novel Methods of Estimating Polarization Dependence in Semiconductor Optical Amplifiers Integrated with Spot-Size Convertors},
year={2003},
volume={E86-C},
number={5},
pages={831-837},
abstract={We propose a novel method of precisely measuring the polarization dependence of single pass gain (PDG) in a semiconductor optical amplifier integrated with spot-size convertors (SS-SOA). By averaging the signal gain of a SS-SOA over a wide wavelength range using the amplified spontaneous emission (ASE) of an erbium doped fiber (EDF), the PDG can be accurately estimated. This is because the influence of gain ripples on the measurement results are drastically reduced. We successfully evaluated the PDG of an angled-facet SS-SOA, even before the process of anti-reflection coating, within a small error of 0.5dB. The EDF-ASE technique is useful in sampling tests and selecting angled-facet SS-SOA chips from wafers. The polarization dependence of the coupling efficiency (PDCE) between a SS-SOA and optical fiber is also evaluated by measuring the photo-current of the active layer for TE and TM input signals. It is possible, therefore, to specify the polarization characteristics of the active region and spot-size converter region, which are indispensable parameters for the design of the SS-SOA.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - Novel Methods of Estimating Polarization Dependence in Semiconductor Optical Amplifiers Integrated with Spot-Size Convertors
T2 - IEICE TRANSACTIONS on Electronics
SP - 831
EP - 837
AU - Toshio ITO
AU - Katsuaki MAGARI
AU - Yasuo SHIBATA
AU - Yoshihiro KAWAGUCHI
AU - Yasuhiro KONDO
AU - Yuichi TOHMORI
AU - Yasuhiro SUZUKI
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2003
AB - We propose a novel method of precisely measuring the polarization dependence of single pass gain (PDG) in a semiconductor optical amplifier integrated with spot-size convertors (SS-SOA). By averaging the signal gain of a SS-SOA over a wide wavelength range using the amplified spontaneous emission (ASE) of an erbium doped fiber (EDF), the PDG can be accurately estimated. This is because the influence of gain ripples on the measurement results are drastically reduced. We successfully evaluated the PDG of an angled-facet SS-SOA, even before the process of anti-reflection coating, within a small error of 0.5dB. The EDF-ASE technique is useful in sampling tests and selecting angled-facet SS-SOA chips from wafers. The polarization dependence of the coupling efficiency (PDCE) between a SS-SOA and optical fiber is also evaluated by measuring the photo-current of the active layer for TE and TM input signals. It is possible, therefore, to specify the polarization characteristics of the active region and spot-size converter region, which are indispensable parameters for the design of the SS-SOA.
ER -