We have fabricated and investigated InGaAs Esaki tunnel diodes, grown on GaAs or InP substrates, of varied defect densities. The tunnel diodes exhibit the same I-V characteristics in spite of the variation of defect density. Under the simple thermal annealing and forward current stress tests, the change in the valley current was not observed, indicating that defects were not increased. On the other hand, the reduction in the peak current due to the carbon diffusion was observed under both tests. The diffusion was enhanced by the stress current owing to the energy dissipation associated with the nonradiative electron-hole recombination. From the reduction rates of the peak current, we obtained the thermal and current-enhanced carbon diffusion constants in InGaAs, which are independent of defect density. Although thermal diffusion of carbon in InGaAs is comparable with that in GaAs, the current-induced enhancement of diffusion in InGaAs is extremely weaker than that in GaAs. The difference between activation energy of thermal and current-enhanced diffusion is 0.8 eV, which is independent of stress current density and close to InGaAs bandgap energy. This indicates that the current-enhanced diffusion is dominated by the energy dissipation associated with nonradiative band-to-band recombination. This enhancement mechanism well explains that the current-induced enhancement is independent of defect density and extremely weak. We also have found that the current-enhanced diffusion constant is approximately proportional to the square of current density, suggesting that the recombination in the depletion layer dominates the current-enhanced diffusion.

We have developed a practical 3-D integrated process simulator (3-D MIPS) based on the orthogonal grid. 3-D MIPS has a 3-D topography simulator (3-D MULSS) and 3-D impurity simulator which simulates the processes of ion implantation, impurity diffusion and oxidation. In particular, its diffusion and segregation model is new and practical. It assumes the continuity of impurity concentration at the material boundary in order to coordinate with the topography simulator (3-D MULSS) with cells in which two or more kinds of materials exist. And then, we introduced a time-step control method using the Dufort-Frankel method of diffusion analysis for stable calculation, and a selective oxidation model to apply to more general structures than LOCOS structure. After that, the 3-D MIPS diffusion model is evaluated compared with experimental data. Finally, the 3-D MIPS is applied to 3-D simulations of the nMOS Tr. structure with LOCOS isolation, wiring interconnect and pn-junction capacitances, and DRAM storage node area.