Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities

Hideki ONO; Satoshi TANIGUCHI; Toshi-kazu SUZUKI

doi:10.1093/ietele/e89-c.7.1020

Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities

Hideki ONO, Satoshi TANIGUCHI, Toshi-kazu SUZUKI

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We have fabricated and investigated InGaAs Esaki tunnel diodes, grown on GaAs or InP substrates, of varied defect densities. The tunnel diodes exhibit the same I-V characteristics in spite of the variation of defect density. Under the simple thermal annealing and forward current stress tests, the change in the valley current was not observed, indicating that defects were not increased. On the other hand, the reduction in the peak current due to the carbon diffusion was observed under both tests. The diffusion was enhanced by the stress current owing to the energy dissipation associated with the nonradiative electron-hole recombination. From the reduction rates of the peak current, we obtained the thermal and current-enhanced carbon diffusion constants in InGaAs, which are independent of defect density. Although thermal diffusion of carbon in InGaAs is comparable with that in GaAs, the current-induced enhancement of diffusion in InGaAs is extremely weaker than that in GaAs. The difference between activation energy of thermal and current-enhanced diffusion is 0.8 eV, which is independent of stress current density and close to InGaAs bandgap energy. This indicates that the current-enhanced diffusion is dominated by the energy dissipation associated with nonradiative band-to-band recombination. This enhancement mechanism well explains that the current-induced enhancement is independent of defect density and extremely weak. We also have found that the current-enhanced diffusion constant is approximately proportional to the square of current density, suggesting that the recombination in the depletion layer dominates the current-enhanced diffusion.

Publication: IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.1020-1024

Publication Date: 2006/07/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e89-c.7.1020

Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)

Category: THz Devices

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Hideki ONO, Satoshi TANIGUCHI, Toshi-kazu SUZUKI, "Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities" in IEICE TRANSACTIONS on Electronics, vol. E89-C, no. 7, pp. 1020-1024, July 2006, doi: 10.1093/ietele/e89-c.7.1020.
Abstract: We have fabricated and investigated InGaAs Esaki tunnel diodes, grown on GaAs or InP substrates, of varied defect densities. The tunnel diodes exhibit the same I-V characteristics in spite of the variation of defect density. Under the simple thermal annealing and forward current stress tests, the change in the valley current was not observed, indicating that defects were not increased. On the other hand, the reduction in the peak current due to the carbon diffusion was observed under both tests. The diffusion was enhanced by the stress current owing to the energy dissipation associated with the nonradiative electron-hole recombination. From the reduction rates of the peak current, we obtained the thermal and current-enhanced carbon diffusion constants in InGaAs, which are independent of defect density. Although thermal diffusion of carbon in InGaAs is comparable with that in GaAs, the current-induced enhancement of diffusion in InGaAs is extremely weaker than that in GaAs. The difference between activation energy of thermal and current-enhanced diffusion is 0.8 eV, which is independent of stress current density and close to InGaAs bandgap energy. This indicates that the current-enhanced diffusion is dominated by the energy dissipation associated with nonradiative band-to-band recombination. This enhancement mechanism well explains that the current-induced enhancement is independent of defect density and extremely weak. We also have found that the current-enhanced diffusion constant is approximately proportional to the square of current density, suggesting that the recombination in the depletion layer dominates the current-enhanced diffusion.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.1020/_p

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@ARTICLE{e89-c_7_1020,
author={Hideki ONO, Satoshi TANIGUCHI, Toshi-kazu SUZUKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities},
year={2006},
volume={E89-C},
number={7},
pages={1020-1024},
abstract={We have fabricated and investigated InGaAs Esaki tunnel diodes, grown on GaAs or InP substrates, of varied defect densities. The tunnel diodes exhibit the same I-V characteristics in spite of the variation of defect density. Under the simple thermal annealing and forward current stress tests, the change in the valley current was not observed, indicating that defects were not increased. On the other hand, the reduction in the peak current due to the carbon diffusion was observed under both tests. The diffusion was enhanced by the stress current owing to the energy dissipation associated with the nonradiative electron-hole recombination. From the reduction rates of the peak current, we obtained the thermal and current-enhanced carbon diffusion constants in InGaAs, which are independent of defect density. Although thermal diffusion of carbon in InGaAs is comparable with that in GaAs, the current-induced enhancement of diffusion in InGaAs is extremely weaker than that in GaAs. The difference between activation energy of thermal and current-enhanced diffusion is 0.8 eV, which is independent of stress current density and close to InGaAs bandgap energy. This indicates that the current-enhanced diffusion is dominated by the energy dissipation associated with nonradiative band-to-band recombination. This enhancement mechanism well explains that the current-induced enhancement is independent of defect density and extremely weak. We also have found that the current-enhanced diffusion constant is approximately proportional to the square of current density, suggesting that the recombination in the depletion layer dominates the current-enhanced diffusion.},
keywords={},
doi={10.1093/ietele/e89-c.7.1020},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities
T2 - IEICE TRANSACTIONS on Electronics
SP - 1020
EP - 1024
AU - Hideki ONO
AU - Satoshi TANIGUCHI
AU - Toshi-kazu SUZUKI
PY - 2006
DO - 10.1093/ietele/e89-c.7.1020
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - We have fabricated and investigated InGaAs Esaki tunnel diodes, grown on GaAs or InP substrates, of varied defect densities. The tunnel diodes exhibit the same I-V characteristics in spite of the variation of defect density. Under the simple thermal annealing and forward current stress tests, the change in the valley current was not observed, indicating that defects were not increased. On the other hand, the reduction in the peak current due to the carbon diffusion was observed under both tests. The diffusion was enhanced by the stress current owing to the energy dissipation associated with the nonradiative electron-hole recombination. From the reduction rates of the peak current, we obtained the thermal and current-enhanced carbon diffusion constants in InGaAs, which are independent of defect density. Although thermal diffusion of carbon in InGaAs is comparable with that in GaAs, the current-induced enhancement of diffusion in InGaAs is extremely weaker than that in GaAs. The difference between activation energy of thermal and current-enhanced diffusion is 0.8 eV, which is independent of stress current density and close to InGaAs bandgap energy. This indicates that the current-enhanced diffusion is dominated by the energy dissipation associated with nonradiative band-to-band recombination. This enhancement mechanism well explains that the current-induced enhancement is independent of defect density and extremely weak. We also have found that the current-enhanced diffusion constant is approximately proportional to the square of current density, suggesting that the recombination in the depletion layer dominates the current-enhanced diffusion.
ER -