Chip-level substrate coupling analysis uses F-matrix computation with slice-and-stack execution to include highly concentrated substrate resistivity gradient. The technique that has been applied to evaluation of device-level isolation structures against substrate coupling is now developed into chip-level substrate noise analysis. A time-series divided parasitic capacitance (TSDPC) model is equivalent to a transition controllable noise source (TCNS) circuit that captures noise generation in a CMOS digital circuit. A reference structure incorporating TCNS circuits and an array of on-chip high precision substrate noise monitors provides a basis for the verification of chip-level analysis of substrate coupling in a given technology. Test chips fabricated in two different wafer processings of 0.30-µm and 0.18-µm CMOS technologies demonstrate the universal availability of the proposed analysis techniques. Substrate noise simulation achieves no more than 3 dB discrepancy in peak amplitude compared to measurements with 100-ps/100-µV resolution, enabling precise evaluation of the impacts of the distant placements of sensitive devices from sources of noise as well as application of guard ring/band structures.