A test structure to analyze asymmetry and orientation dependence of MOSFETs is presented. n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry characteristics of IDsat and IBmax with respect to the interchange of source and drain was examined. Although both IDsat and IBmax have similar channel orientation dependence, IBmax in interchanged S/D measurements shows asymmetrical characteristics, which can be applied to a sensitive method for device asymmetry detection.

This paper presents an accurate and semi-physical MOSFET substrate current model suitable for analog circuit simulations. The proposed model is valid over a wide range of the electric field present in MOSFET devices and is continuous from cut off region to saturation region. The developed model was implemented into the circuit simulator, SPICE3. Benchmark of the developed model was achieved by making comparisons between the measured data and the simulated data for MOSFET devices, push-pull CMOS inverters, a regulated cascode CMOS operational amplifier. The experimental results showed that the developed model was more accurate and computationally efficient than the conventional models.

We propose a nonlocal impact ionization model applicable for the drain region where electric field increases exponentially. It is expressed as a function of an electric field and a characteristic length which is determined by a thickness of gate oxide and a source/drain junction depth. An analytical substrate current model for n-MOSFET is also derived from the new nonlocal impact ionization model. The model well explains the reason why the theoretical characteristic length differs from empirical expressions used in a pseudo two-dimensional model for MOSFET's. The nonlocal impact ionization model implemented in a device simulator demonstrates that the new model can predict substrate current correctly in the framework of drift-diffusion model.