Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of <I>n</I>-MOSFET's

Ken-ichiro SONODA; Mitsuru YAMAJI; Kenji TANIGUCHI; Chihiro HAMAGUCHI; Tatsuya KUNIKIYO

Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of n-MOSFET's

Ken-ichiro SONODA, Mitsuru YAMAJI, Kenji TANIGUCHI, Chihiro HAMAGUCHI, Tatsuya KUNIKIYO

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We propose a nonlocal impact ionization model applicable for the drain region where electric field increases exponentially. It is expressed as a function of an electric field and a characteristic length which is determined by a thickness of gate oxide and a source/drain junction depth. An analytical substrate current model for n-MOSFET is also derived from the new nonlocal impact ionization model. The model well explains the reason why the theoretical characteristic length differs from empirical expressions used in a pseudo two-dimensional model for MOSFET's. The nonlocal impact ionization model implemented in a device simulator demonstrates that the new model can predict substrate current correctly in the framework of drift-diffusion model.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.3 pp.274-280

Publication Date: 1995/03/25

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Type of Manuscript: Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)

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Ken-ichiro SONODA, Mitsuru YAMAJI, Kenji TANIGUCHI, Chihiro HAMAGUCHI, Tatsuya KUNIKIYO, "Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of n-MOSFET's" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 3, pp. 274-280, March 1995, doi: .
Abstract: We propose a nonlocal impact ionization model applicable for the drain region where electric field increases exponentially. It is expressed as a function of an electric field and a characteristic length which is determined by a thickness of gate oxide and a source/drain junction depth. An analytical substrate current model for n-MOSFET is also derived from the new nonlocal impact ionization model. The model well explains the reason why the theoretical characteristic length differs from empirical expressions used in a pseudo two-dimensional model for MOSFET's. The nonlocal impact ionization model implemented in a device simulator demonstrates that the new model can predict substrate current correctly in the framework of drift-diffusion model.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_3_274/_p

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@ARTICLE{e78-c_3_274,
author={Ken-ichiro SONODA, Mitsuru YAMAJI, Kenji TANIGUCHI, Chihiro HAMAGUCHI, Tatsuya KUNIKIYO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of n-MOSFET's},
year={1995},
volume={E78-C},
number={3},
pages={274-280},
abstract={We propose a nonlocal impact ionization model applicable for the drain region where electric field increases exponentially. It is expressed as a function of an electric field and a characteristic length which is determined by a thickness of gate oxide and a source/drain junction depth. An analytical substrate current model for n-MOSFET is also derived from the new nonlocal impact ionization model. The model well explains the reason why the theoretical characteristic length differs from empirical expressions used in a pseudo two-dimensional model for MOSFET's. The nonlocal impact ionization model implemented in a device simulator demonstrates that the new model can predict substrate current correctly in the framework of drift-diffusion model.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of n-MOSFET's
T2 - IEICE TRANSACTIONS on Electronics
SP - 274
EP - 280
AU - Ken-ichiro SONODA
AU - Mitsuru YAMAJI
AU - Kenji TANIGUCHI
AU - Chihiro HAMAGUCHI
AU - Tatsuya KUNIKIYO
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1995
AB - We propose a nonlocal impact ionization model applicable for the drain region where electric field increases exponentially. It is expressed as a function of an electric field and a characteristic length which is determined by a thickness of gate oxide and a source/drain junction depth. An analytical substrate current model for n-MOSFET is also derived from the new nonlocal impact ionization model. The model well explains the reason why the theoretical characteristic length differs from empirical expressions used in a pseudo two-dimensional model for MOSFET's. The nonlocal impact ionization model implemented in a device simulator demonstrates that the new model can predict substrate current correctly in the framework of drift-diffusion model.
ER -