The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS

Ehsanollah FATHI; Ashkan BEHNAM; Pouya HASHEMI; Behzad ESFANDYARPOUR; Morteza FATHIPOUR

doi:10.1093/ietele/e88-c.6.1122

The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS

Ehsanollah FATHI, Ashkan BEHNAM, Pouya HASHEMI, Behzad ESFANDYARPOUR, Morteza FATHIPOUR

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An asymmetric Dual Metal Stack Gate (DMSG) SOI MOSFET transistor has been investigated for its enhanced electrical characteristics. A 2-D physical model has been proposed and its results have been confirmed by those obtained by simulation. These results predict better short channel effects such as drain induced barrier lowering (DIBL) characteristics and hot carrier effects for this device compared to those for conventional SOI MOSFETs. The effects of the Stacked Gate (SG) and Dual Metal Gate (DMG) structures on short channel effects are compared. It has been observed that SG reduces DIBL significantly, while DMG prevents the normal roll-off of the threshold voltage reduction.

Publication: IEICE TRANSACTIONS on Electronics Vol.E88-C No.6 pp.1122-1126

Publication Date: 2005/06/01

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DOI: 10.1093/ietele/e88-c.6.1122

Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies)

Category: Device

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Ehsanollah FATHI, Ashkan BEHNAM, Pouya HASHEMI, Behzad ESFANDYARPOUR, Morteza FATHIPOUR, "The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS" in IEICE TRANSACTIONS on Electronics, vol. E88-C, no. 6, pp. 1122-1126, June 2005, doi: 10.1093/ietele/e88-c.6.1122.
Abstract: An asymmetric Dual Metal Stack Gate (DMSG) SOI MOSFET transistor has been investigated for its enhanced electrical characteristics. A 2-D physical model has been proposed and its results have been confirmed by those obtained by simulation. These results predict better short channel effects such as drain induced barrier lowering (DIBL) characteristics and hot carrier effects for this device compared to those for conventional SOI MOSFETs. The effects of the Stacked Gate (SG) and Dual Metal Gate (DMG) structures on short channel effects are compared. It has been observed that SG reduces DIBL significantly, while DMG prevents the normal roll-off of the threshold voltage reduction.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.6.1122/_p

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@ARTICLE{e88-c_6_1122,
author={Ehsanollah FATHI, Ashkan BEHNAM, Pouya HASHEMI, Behzad ESFANDYARPOUR, Morteza FATHIPOUR, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS},
year={2005},
volume={E88-C},
number={6},
pages={1122-1126},
abstract={An asymmetric Dual Metal Stack Gate (DMSG) SOI MOSFET transistor has been investigated for its enhanced electrical characteristics. A 2-D physical model has been proposed and its results have been confirmed by those obtained by simulation. These results predict better short channel effects such as drain induced barrier lowering (DIBL) characteristics and hot carrier effects for this device compared to those for conventional SOI MOSFETs. The effects of the Stacked Gate (SG) and Dual Metal Gate (DMG) structures on short channel effects are compared. It has been observed that SG reduces DIBL significantly, while DMG prevents the normal roll-off of the threshold voltage reduction.},
keywords={},
doi={10.1093/ietele/e88-c.6.1122},
ISSN={},
month={June},}

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TY - JOUR
TI - The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS
T2 - IEICE TRANSACTIONS on Electronics
SP - 1122
EP - 1126
AU - Ehsanollah FATHI
AU - Ashkan BEHNAM
AU - Pouya HASHEMI
AU - Behzad ESFANDYARPOUR
AU - Morteza FATHIPOUR
PY - 2005
DO - 10.1093/ietele/e88-c.6.1122
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2005
AB - An asymmetric Dual Metal Stack Gate (DMSG) SOI MOSFET transistor has been investigated for its enhanced electrical characteristics. A 2-D physical model has been proposed and its results have been confirmed by those obtained by simulation. These results predict better short channel effects such as drain induced barrier lowering (DIBL) characteristics and hot carrier effects for this device compared to those for conventional SOI MOSFETs. The effects of the Stacked Gate (SG) and Dual Metal Gate (DMG) structures on short channel effects are compared. It has been observed that SG reduces DIBL significantly, while DMG prevents the normal roll-off of the threshold voltage reduction.
ER -