A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient

Kyung Soo PARK; Sun Bo WOO; Kae Dal KWACK; Tae Whan KIM

doi:10.1093/ietele/e91-c.5.751

A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient

Kyung Soo PARK, Sun Bo WOO, Kae Dal KWACK, Tae Whan KIM

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A novel design for temperature-compensated complementary metal-oxide semiconductor (CMOS) voltage reference sources by using the 1st order voltage reference taking into account the electrical property of the conventional current generator was proposed to minimize a temperature coefficient. A temperature coefficient of the proposed voltage reference source was estimated by using the current generator, which operated at smaller or larger temperature in comparison with the optimized operating temperature. The temperature coefficient at temperature range between -40 and 125, obtained from the simulated data by using hynix 0.35 µm CMOS technology, was 3.33 ppm/. The simulated results indicate that the proposed temperature-compensated CMOS voltage reference sources by using the 1st order voltage reference taking into account the electrical properties of the conventional current generator can be used to decrease the temperature coefficient.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.5 pp.751-755

Publication Date: 2008/05/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.5.751

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

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Kyung Soo PARK, Sun Bo WOO, Kae Dal KWACK, Tae Whan KIM, "A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 5, pp. 751-755, May 2008, doi: 10.1093/ietele/e91-c.5.751.
Abstract: A novel design for temperature-compensated complementary metal-oxide semiconductor (CMOS) voltage reference sources by using the 1st order voltage reference taking into account the electrical property of the conventional current generator was proposed to minimize a temperature coefficient. A temperature coefficient of the proposed voltage reference source was estimated by using the current generator, which operated at smaller or larger temperature in comparison with the optimized operating temperature. The temperature coefficient at temperature range between -40 and 125, obtained from the simulated data by using hynix 0.35 µm CMOS technology, was 3.33 ppm/. The simulated results indicate that the proposed temperature-compensated CMOS voltage reference sources by using the 1st order voltage reference taking into account the electrical properties of the conventional current generator can be used to decrease the temperature coefficient.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.5.751/_p

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@ARTICLE{e91-c_5_751,
author={Kyung Soo PARK, Sun Bo WOO, Kae Dal KWACK, Tae Whan KIM, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient},
year={2008},
volume={E91-C},
number={5},
pages={751-755},
abstract={A novel design for temperature-compensated complementary metal-oxide semiconductor (CMOS) voltage reference sources by using the 1st order voltage reference taking into account the electrical property of the conventional current generator was proposed to minimize a temperature coefficient. A temperature coefficient of the proposed voltage reference source was estimated by using the current generator, which operated at smaller or larger temperature in comparison with the optimized operating temperature. The temperature coefficient at temperature range between -40 and 125, obtained from the simulated data by using hynix 0.35 µm CMOS technology, was 3.33 ppm/. The simulated results indicate that the proposed temperature-compensated CMOS voltage reference sources by using the 1st order voltage reference taking into account the electrical properties of the conventional current generator can be used to decrease the temperature coefficient.},
keywords={},
doi={10.1093/ietele/e91-c.5.751},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient
T2 - IEICE TRANSACTIONS on Electronics
SP - 751
EP - 755
AU - Kyung Soo PARK
AU - Sun Bo WOO
AU - Kae Dal KWACK
AU - Tae Whan KIM
PY - 2008
DO - 10.1093/ietele/e91-c.5.751
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2008
AB - A novel design for temperature-compensated complementary metal-oxide semiconductor (CMOS) voltage reference sources by using the 1st order voltage reference taking into account the electrical property of the conventional current generator was proposed to minimize a temperature coefficient. A temperature coefficient of the proposed voltage reference source was estimated by using the current generator, which operated at smaller or larger temperature in comparison with the optimized operating temperature. The temperature coefficient at temperature range between -40 and 125, obtained from the simulated data by using hynix 0.35 µm CMOS technology, was 3.33 ppm/. The simulated results indicate that the proposed temperature-compensated CMOS voltage reference sources by using the 1st order voltage reference taking into account the electrical properties of the conventional current generator can be used to decrease the temperature coefficient.
ER -