A NEW SOI DEVIDE--DELTA--Structure and Characteristics

Eiji TAKEDA; Digh HISAMOTO; Kaori NAKAMURA

A NEW SOI DEVIDE--DELTA--Structure and Characteristics

Eiji TAKEDA, Digh HISAMOTO, Kaori NAKAMURA

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A new SOI device structure--a fully DEpleted Lean channel TrAnsistor (DELTA)--which has a new vertical gate structure and an ultra-thin film, bulk Si SOI structure, is proposed. Through experiments and simulation, its fabrication processes and device characteristics are discussed. By using such a new device structure, crystal quality problems caused by recrystallization of poly-Si are solved. DELTA provides a 7.5 times larger channel current than that of conventional planar MOSFETs with the same mask layouts. This is due to a vertical channel structure and a thin film effect. Also, DELTA shows an excellent subthreshold swing of 62 mV/decade. Furthermore, by using a two-carrier device simulator, the punchthrough phenomena in thin film SOI MOSFETs are reexamined from the viewpoint of hole behavior in the substrate. As a result, it was found that the punchthrough resistance of thin film SOI MOSFETs is not always stronger than that of conventional ones. Despite disappearance of the so-called substrate floating effects, attention will still have to be paid to hole behavior in realizing sophisticated SOI devices.

Publication: IEICE TRANSACTIONS on Electronics Vol.E74-C No.2 pp.360-368

Publication Date: 1991/02/25

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Eiji TAKEDA
Digh HISAMOTO
Kaori NAKAMURA

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Eiji TAKEDA, Digh HISAMOTO, Kaori NAKAMURA, "A NEW SOI DEVIDE--DELTA--Structure and Characteristics" in IEICE TRANSACTIONS on Electronics, vol. E74-C, no. 2, pp. 360-368, February 1991, doi: .
Abstract: A new SOI device structure--a fully DEpleted Lean channel TrAnsistor (DELTA)--which has a new vertical gate structure and an ultra-thin film, bulk Si SOI structure, is proposed. Through experiments and simulation, its fabrication processes and device characteristics are discussed. By using such a new device structure, crystal quality problems caused by recrystallization of poly-Si are solved. DELTA provides a 7.5 times larger channel current than that of conventional planar MOSFETs with the same mask layouts. This is due to a vertical channel structure and a thin film effect. Also, DELTA shows an excellent subthreshold swing of 62 mV/decade. Furthermore, by using a two-carrier device simulator, the punchthrough phenomena in thin film SOI MOSFETs are reexamined from the viewpoint of hole behavior in the substrate. As a result, it was found that the punchthrough resistance of thin film SOI MOSFETs is not always stronger than that of conventional ones. Despite disappearance of the so-called substrate floating effects, attention will still have to be paid to hole behavior in realizing sophisticated SOI devices.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e74-c_2_360/_p

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@ARTICLE{e74-c_2_360,
author={Eiji TAKEDA, Digh HISAMOTO, Kaori NAKAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A NEW SOI DEVIDE--DELTA--Structure and Characteristics},
year={1991},
volume={E74-C},
number={2},
pages={360-368},
abstract={A new SOI device structure--a fully DEpleted Lean channel TrAnsistor (DELTA)--which has a new vertical gate structure and an ultra-thin film, bulk Si SOI structure, is proposed. Through experiments and simulation, its fabrication processes and device characteristics are discussed. By using such a new device structure, crystal quality problems caused by recrystallization of poly-Si are solved. DELTA provides a 7.5 times larger channel current than that of conventional planar MOSFETs with the same mask layouts. This is due to a vertical channel structure and a thin film effect. Also, DELTA shows an excellent subthreshold swing of 62 mV/decade. Furthermore, by using a two-carrier device simulator, the punchthrough phenomena in thin film SOI MOSFETs are reexamined from the viewpoint of hole behavior in the substrate. As a result, it was found that the punchthrough resistance of thin film SOI MOSFETs is not always stronger than that of conventional ones. Despite disappearance of the so-called substrate floating effects, attention will still have to be paid to hole behavior in realizing sophisticated SOI devices.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - A NEW SOI DEVIDE--DELTA--Structure and Characteristics
T2 - IEICE TRANSACTIONS on Electronics
SP - 360
EP - 368
AU - Eiji TAKEDA
AU - Digh HISAMOTO
AU - Kaori NAKAMURA
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1991
AB - A new SOI device structure--a fully DEpleted Lean channel TrAnsistor (DELTA)--which has a new vertical gate structure and an ultra-thin film, bulk Si SOI structure, is proposed. Through experiments and simulation, its fabrication processes and device characteristics are discussed. By using such a new device structure, crystal quality problems caused by recrystallization of poly-Si are solved. DELTA provides a 7.5 times larger channel current than that of conventional planar MOSFETs with the same mask layouts. This is due to a vertical channel structure and a thin film effect. Also, DELTA shows an excellent subthreshold swing of 62 mV/decade. Furthermore, by using a two-carrier device simulator, the punchthrough phenomena in thin film SOI MOSFETs are reexamined from the viewpoint of hole behavior in the substrate. As a result, it was found that the punchthrough resistance of thin film SOI MOSFETs is not always stronger than that of conventional ones. Despite disappearance of the so-called substrate floating effects, attention will still have to be paid to hole behavior in realizing sophisticated SOI devices.
ER -