Characterization of the Laser-Recrystallized Single-Crystalline Si-SiO<SUB>2</SUB> Interface

Nobuo SASAKI

Characterization of the Laser-Recrystallized Single-Crystalline Si-SiO₂ Interface

Nobuo SASAKI

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The interface between laser-recrystallized Si and SiO₂ is investigated by means of capacitance-voltage curve measurements. The recrystallization is performed by scanning cw Ar⁺ laser. The change in the C-V curves shows that the laser-recrystallization generates positive charge and the fast interface states at the Si-SiO₂ interface, and creates n-type defects in recrystallized bulk silicon. Nominal interface charge increases linearly with a laser power. The increase in the charge is enhanced by fast laser-beam scanning velocity. The change in the C-V curve is suppressed, if a substrate is heated up to 450 during recrystallization. Complete recovery of the induced change in the C-V curves requires a subsequent furnace annealing at a temperature as high as 1100. These phenomena are explained by the generation of oxygen vacancy at the Si-SiO₂ interface and quenched-in point defects in the recrystallized Si. The oxygen vacancy is produced by a reaction between the melted Si and SiO₂. The quenched-in defects are produced during fast cooling of the melted Si.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.12 pp.1430-1437

Publication Date: 1992/12/25

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Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)

Category: SOI Wafers

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Nobuo SASAKI, "Characterization of the Laser-Recrystallized Single-Crystalline Si-SiO2 Interface" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 12, pp. 1430-1437, December 1992, doi: .
Abstract: The interface between laser-recrystallized Si and SiO₂ is investigated by means of capacitance-voltage curve measurements. The recrystallization is performed by scanning cw Ar⁺ laser. The change in the C-V curves shows that the laser-recrystallization generates positive charge and the fast interface states at the Si-SiO₂ interface, and creates n-type defects in recrystallized bulk silicon. Nominal interface charge increases linearly with a laser power. The increase in the charge is enhanced by fast laser-beam scanning velocity. The change in the C-V curve is suppressed, if a substrate is heated up to 450 during recrystallization. Complete recovery of the induced change in the C-V curves requires a subsequent furnace annealing at a temperature as high as 1100. These phenomena are explained by the generation of oxygen vacancy at the Si-SiO₂ interface and quenched-in point defects in the recrystallized Si. The oxygen vacancy is produced by a reaction between the melted Si and SiO₂. The quenched-in defects are produced during fast cooling of the melted Si.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e75-c_12_1430/_p

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@ARTICLE{e75-c_12_1430,
author={Nobuo SASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of the Laser-Recrystallized Single-Crystalline Si-SiO2 Interface},
year={1992},
volume={E75-C},
number={12},
pages={1430-1437},
abstract={The interface between laser-recrystallized Si and SiO₂ is investigated by means of capacitance-voltage curve measurements. The recrystallization is performed by scanning cw Ar⁺ laser. The change in the C-V curves shows that the laser-recrystallization generates positive charge and the fast interface states at the Si-SiO₂ interface, and creates n-type defects in recrystallized bulk silicon. Nominal interface charge increases linearly with a laser power. The increase in the charge is enhanced by fast laser-beam scanning velocity. The change in the C-V curve is suppressed, if a substrate is heated up to 450 during recrystallization. Complete recovery of the induced change in the C-V curves requires a subsequent furnace annealing at a temperature as high as 1100. These phenomena are explained by the generation of oxygen vacancy at the Si-SiO₂ interface and quenched-in point defects in the recrystallized Si. The oxygen vacancy is produced by a reaction between the melted Si and SiO₂. The quenched-in defects are produced during fast cooling of the melted Si.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - Characterization of the Laser-Recrystallized Single-Crystalline Si-SiO2 Interface
T2 - IEICE TRANSACTIONS on Electronics
SP - 1430
EP - 1437
AU - Nobuo SASAKI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1992
AB - The interface between laser-recrystallized Si and SiO₂ is investigated by means of capacitance-voltage curve measurements. The recrystallization is performed by scanning cw Ar⁺ laser. The change in the C-V curves shows that the laser-recrystallization generates positive charge and the fast interface states at the Si-SiO₂ interface, and creates n-type defects in recrystallized bulk silicon. Nominal interface charge increases linearly with a laser power. The increase in the charge is enhanced by fast laser-beam scanning velocity. The change in the C-V curve is suppressed, if a substrate is heated up to 450 during recrystallization. Complete recovery of the induced change in the C-V curves requires a subsequent furnace annealing at a temperature as high as 1100. These phenomena are explained by the generation of oxygen vacancy at the Si-SiO₂ interface and quenched-in point defects in the recrystallized Si. The oxygen vacancy is produced by a reaction between the melted Si and SiO₂. The quenched-in defects are produced during fast cooling of the melted Si.
ER -