Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs

Anna PIERANTONI; Paolo CIAMPOLINI; Antonio GNUDI; Giorgio BACCARANI

Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs

Anna PIERANTONI, Paolo CIAMPOLINI, Antonio GNUDI, Giorgio BACCARANI

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In this paper, a "hydrodynamic" version of the three-dimensional code HFIELDS-3D is used to achieve a detailed knowledge on the distribution of the substrate current inside a recessed-oxide MOSFET. The physical model features a temperature-dependent formulation of the impact-ionization rate, allowing non-local effects to be accounted for. The discretization strategy relies on the Box Integration scheme and uses suitable generalizations of the Scharfetter-Gummel technique for the energy-balance equation. The simulation results show that the narrow-channel effect has a different impact on drain and substrate currents. Further three-dimensional effects, such as the extra heating of the carriers at the channel edge, are demonstrated.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.2 pp.181-188

Publication Date: 1992/02/25

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Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)

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Anna PIERANTONI, Paolo CIAMPOLINI, Antonio GNUDI, Giorgio BACCARANI, "Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 2, pp. 181-188, February 1992, doi: .
Abstract: In this paper, a "hydrodynamic" version of the three-dimensional code HFIELDS-3D is used to achieve a detailed knowledge on the distribution of the substrate current inside a recessed-oxide MOSFET. The physical model features a temperature-dependent formulation of the impact-ionization rate, allowing non-local effects to be accounted for. The discretization strategy relies on the Box Integration scheme and uses suitable generalizations of the Scharfetter-Gummel technique for the energy-balance equation. The simulation results show that the narrow-channel effect has a different impact on drain and substrate currents. Further three-dimensional effects, such as the extra heating of the carriers at the channel edge, are demonstrated.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e75-c_2_181/_p

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@ARTICLE{e75-c_2_181,
author={Anna PIERANTONI, Paolo CIAMPOLINI, Antonio GNUDI, Giorgio BACCARANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs},
year={1992},
volume={E75-C},
number={2},
pages={181-188},
abstract={In this paper, a "hydrodynamic" version of the three-dimensional code HFIELDS-3D is used to achieve a detailed knowledge on the distribution of the substrate current inside a recessed-oxide MOSFET. The physical model features a temperature-dependent formulation of the impact-ionization rate, allowing non-local effects to be accounted for. The discretization strategy relies on the Box Integration scheme and uses suitable generalizations of the Scharfetter-Gummel technique for the energy-balance equation. The simulation results show that the narrow-channel effect has a different impact on drain and substrate currents. Further three-dimensional effects, such as the extra heating of the carriers at the channel edge, are demonstrated.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 181
EP - 188
AU - Anna PIERANTONI
AU - Paolo CIAMPOLINI
AU - Antonio GNUDI
AU - Giorgio BACCARANI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1992
AB - In this paper, a "hydrodynamic" version of the three-dimensional code HFIELDS-3D is used to achieve a detailed knowledge on the distribution of the substrate current inside a recessed-oxide MOSFET. The physical model features a temperature-dependent formulation of the impact-ionization rate, allowing non-local effects to be accounted for. The discretization strategy relies on the Box Integration scheme and uses suitable generalizations of the Scharfetter-Gummel technique for the energy-balance equation. The simulation results show that the narrow-channel effect has a different impact on drain and substrate currents. Further three-dimensional effects, such as the extra heating of the carriers at the channel edge, are demonstrated.
ER -