Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer

Yoshiroh TSUBOI; Claudio FIFGNA; Enrico SANGIORGI; Bruno RICCÒ; Tetsunori WADA; Yasuhiro KATSUMATA; Hiroshi IWAI

Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer

Yoshiroh TSUBOI, Claudio FIFGNA, Enrico SANGIORGI, Bruno RICCÒ, Tetsunori WADA, Yasuhiro KATSUMATA, Hiroshi IWAI

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We investigated the impact of velocity overshoot effect on collector signal delay of bipolar devices by using Monte Carlo simulation method. We found that insertion of an i-layer (lightly doped, intrinsic layer) between base and collector can increase the delay, but the strength of this effect is a function of the i-layer thickness. When the i-layer becomes thinner, the problem of increasing delay seems to disappear. This recovery of delay is realised with a mechanism which is completely different from that in drift-diffusion model.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.2 pp.174-178

Publication Date: 1994/02/25

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Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))

Category: Device Simulation

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Yoshiroh TSUBOI, Claudio FIFGNA, Enrico SANGIORGI, Bruno RICCÒ, Tetsunori WADA, Yasuhiro KATSUMATA, Hiroshi IWAI, "Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 2, pp. 174-178, February 1994, doi: .
Abstract: We investigated the impact of velocity overshoot effect on collector signal delay of bipolar devices by using Monte Carlo simulation method. We found that insertion of an i-layer (lightly doped, intrinsic layer) between base and collector can increase the delay, but the strength of this effect is a function of the i-layer thickness. When the i-layer becomes thinner, the problem of increasing delay seems to disappear. This recovery of delay is realised with a mechanism which is completely different from that in drift-diffusion model.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e77-c_2_174/_p

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@ARTICLE{e77-c_2_174,
author={Yoshiroh TSUBOI, Claudio FIFGNA, Enrico SANGIORGI, Bruno RICCÒ, Tetsunori WADA, Yasuhiro KATSUMATA, Hiroshi IWAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer},
year={1994},
volume={E77-C},
number={2},
pages={174-178},
abstract={We investigated the impact of velocity overshoot effect on collector signal delay of bipolar devices by using Monte Carlo simulation method. We found that insertion of an i-layer (lightly doped, intrinsic layer) between base and collector can increase the delay, but the strength of this effect is a function of the i-layer thickness. When the i-layer becomes thinner, the problem of increasing delay seems to disappear. This recovery of delay is realised with a mechanism which is completely different from that in drift-diffusion model.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 174
EP - 178
AU - Yoshiroh TSUBOI
AU - Claudio FIFGNA
AU - Enrico SANGIORGI
AU - Bruno RICCÒ
AU - Tetsunori WADA
AU - Yasuhiro KATSUMATA
AU - Hiroshi IWAI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1994
AB - We investigated the impact of velocity overshoot effect on collector signal delay of bipolar devices by using Monte Carlo simulation method. We found that insertion of an i-layer (lightly doped, intrinsic layer) between base and collector can increase the delay, but the strength of this effect is a function of the i-layer thickness. When the i-layer becomes thinner, the problem of increasing delay seems to disappear. This recovery of delay is realised with a mechanism which is completely different from that in drift-diffusion model.
ER -