Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy

Kenichi AGAWA; Yoshio HASHIMOTO; Kazuhiko HIRAKAWA; Noriaki SAKAMOTO; Toshiaki IKOMA

Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy

Kenichi AGAWA, Yoshio HASHIMOTO, Kazuhiko HIRAKAWA, Noriaki SAKAMOTO, Toshiaki IKOMA

Full Text Views

0

Share
Cite this

Summary :

We have systematically studied the characteristics of Si doping in GaAs grown on (311)A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480. The highest hole density obtained for uniformly doped layers was 1.510²⁰ cm^-3, while for δ-doped layers the sheet hole density as high as 2.610¹³ cm^-2 was achieved. This is the highest hole density ever reported for δ-doped GaAs.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.9 pp.1408-1413

Publication Date: 1994/09/25

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)

Category

Cite this

Copy

Kenichi AGAWA, Yoshio HASHIMOTO, Kazuhiko HIRAKAWA, Noriaki SAKAMOTO, Toshiaki IKOMA, "Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 9, pp. 1408-1413, September 1994, doi: .
Abstract: We have systematically studied the characteristics of Si doping in GaAs grown on (311)A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480. The highest hole density obtained for uniformly doped layers was 1.510²⁰ cm^-3, while for δ-doped layers the sheet hole density as high as 2.610¹³ cm^-2 was achieved. This is the highest hole density ever reported for δ-doped GaAs.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e77-c_9_1408/_p

Copy

@ARTICLE{e77-c_9_1408,
author={Kenichi AGAWA, Yoshio HASHIMOTO, Kazuhiko HIRAKAWA, Noriaki SAKAMOTO, Toshiaki IKOMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy},
year={1994},
volume={E77-C},
number={9},
pages={1408-1413},
abstract={We have systematically studied the characteristics of Si doping in GaAs grown on (311)A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480. The highest hole density obtained for uniformly doped layers was 1.510²⁰ cm^-3, while for δ-doped layers the sheet hole density as high as 2.610¹³ cm^-2 was achieved. This is the highest hole density ever reported for δ-doped GaAs.},
keywords={},
doi={},
ISSN={},
month={September},}

Copy

TY - JOUR
TI - Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy
T2 - IEICE TRANSACTIONS on Electronics
SP - 1408
EP - 1413
AU - Kenichi AGAWA
AU - Yoshio HASHIMOTO
AU - Kazuhiko HIRAKAWA
AU - Noriaki SAKAMOTO
AU - Toshiaki IKOMA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1994
AB - We have systematically studied the characteristics of Si doping in GaAs grown on (311)A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480. The highest hole density obtained for uniformly doped layers was 1.510²⁰ cm^-3, while for δ-doped layers the sheet hole density as high as 2.610¹³ cm^-2 was achieved. This is the highest hole density ever reported for δ-doped GaAs.
ER -