A new low-power and high-speed CMOS interface circuit is proposed in which signals are transmitted by means of impulse voltage. This mode of transmission is called impulse transmission. Although a termination resistor is used for impedance matching, the current through the output transistors and the termination resistor flows only in transient states and no current flows in stable states. The output buffer and the termination resistor dissipate power only in transient states, so their power dissipation is reduced to 30% that of conventional low-voltage-swing CMOS interface circuits at 160 MHz. The circuit was fabricated by 0.5 µm CMOS technology and was evaluated at a supply voltage of 3.3 V. Experimental results confirm low power of 4.8 mW at 160 MHz and high-speed 870 Mb/s error free point-to-point transmission.
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Masafumi NOGAWA, Yusuke OHTOMO, Masayuki INO, "A Low-Power and High-Speed Impulse-Transmission CMOS Interface Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E78-C, no. 12, pp. 1733-1737, December 1995, doi: .
Abstract: A new low-power and high-speed CMOS interface circuit is proposed in which signals are transmitted by means of impulse voltage. This mode of transmission is called impulse transmission. Although a termination resistor is used for impedance matching, the current through the output transistors and the termination resistor flows only in transient states and no current flows in stable states. The output buffer and the termination resistor dissipate power only in transient states, so their power dissipation is reduced to 30% that of conventional low-voltage-swing CMOS interface circuits at 160 MHz. The circuit was fabricated by 0.5 µm CMOS technology and was evaluated at a supply voltage of 3.3 V. Experimental results confirm low power of 4.8 mW at 160 MHz and high-speed 870 Mb/s error free point-to-point transmission.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_12_1733/_p
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@ARTICLE{e78-c_12_1733,
author={Masafumi NOGAWA, Yusuke OHTOMO, Masayuki INO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low-Power and High-Speed Impulse-Transmission CMOS Interface Circuit},
year={1995},
volume={E78-C},
number={12},
pages={1733-1737},
abstract={A new low-power and high-speed CMOS interface circuit is proposed in which signals are transmitted by means of impulse voltage. This mode of transmission is called impulse transmission. Although a termination resistor is used for impedance matching, the current through the output transistors and the termination resistor flows only in transient states and no current flows in stable states. The output buffer and the termination resistor dissipate power only in transient states, so their power dissipation is reduced to 30% that of conventional low-voltage-swing CMOS interface circuits at 160 MHz. The circuit was fabricated by 0.5 µm CMOS technology and was evaluated at a supply voltage of 3.3 V. Experimental results confirm low power of 4.8 mW at 160 MHz and high-speed 870 Mb/s error free point-to-point transmission.},
keywords={},
doi={},
ISSN={},
month={December},}
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TY - JOUR
TI - A Low-Power and High-Speed Impulse-Transmission CMOS Interface Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 1733
EP - 1737
AU - Masafumi NOGAWA
AU - Yusuke OHTOMO
AU - Masayuki INO
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1995
AB - A new low-power and high-speed CMOS interface circuit is proposed in which signals are transmitted by means of impulse voltage. This mode of transmission is called impulse transmission. Although a termination resistor is used for impedance matching, the current through the output transistors and the termination resistor flows only in transient states and no current flows in stable states. The output buffer and the termination resistor dissipate power only in transient states, so their power dissipation is reduced to 30% that of conventional low-voltage-swing CMOS interface circuits at 160 MHz. The circuit was fabricated by 0.5 µm CMOS technology and was evaluated at a supply voltage of 3.3 V. Experimental results confirm low power of 4.8 mW at 160 MHz and high-speed 870 Mb/s error free point-to-point transmission.
ER -