Thermal Noise in Silicon Bipolar Transistors and Circuits for Low-Current Operation--Part <cd02d35.gif>: Compact Device Model--

Yevgeny V. MAMONTOV; Magnus WILLANDER

Thermal Noise in Silicon Bipolar Transistors and Circuits for Low-Current Operation--Part : Compact Device Model--

Yevgeny V. MAMONTOV, Magnus WILLANDER

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This work deals with thermal-noise modeling for silicon vertical bipolar junction transistors (BJTs) and relevant integrated circuits (ICs) operating at low currents. The two-junction BJT compact model is consistently derived from the thermal-noise generalization of the Shockley semiconductor equations developed in work which treats thermal noise as the noise associated with carrier velocity fluctuations. This model describes BJT with the Itô non-linear stochastic-differential-equation (SDE) system and is suitable for large-signal large-fluctuation analysis. It is shown that thermal noise in silicon p-n-junction diode contributes to "microplasma" noise. The above model opens way for a consistent-modeling-based design/optimization of bipolar device noise performance with the help of theory of Itô's SDEs.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.12 pp.1761-1772

Publication Date: 1995/12/25

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Type of Manuscript: PAPER

Category: Integrated Electronics

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Yevgeny V. MAMONTOV, Magnus WILLANDER, "Thermal Noise in Silicon Bipolar Transistors and Circuits for Low-Current Operation--Part : Compact Device Model--" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 12, pp. 1761-1772, December 1995, doi: .
Abstract: This work deals with thermal-noise modeling for silicon vertical bipolar junction transistors (BJTs) and relevant integrated circuits (ICs) operating at low currents. The two-junction BJT compact model is consistently derived from the thermal-noise generalization of the Shockley semiconductor equations developed in work which treats thermal noise as the noise associated with carrier velocity fluctuations. This model describes BJT with the Itô non-linear stochastic-differential-equation (SDE) system and is suitable for large-signal large-fluctuation analysis. It is shown that thermal noise in silicon p-n-junction diode contributes to "microplasma" noise. The above model opens way for a consistent-modeling-based design/optimization of bipolar device noise performance with the help of theory of Itô's SDEs.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_12_1761/_p

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@ARTICLE{e78-c_12_1761,
author={Yevgeny V. MAMONTOV, Magnus WILLANDER, },
journal={IEICE TRANSACTIONS on Electronics},
title={Thermal Noise in Silicon Bipolar Transistors and Circuits for Low-Current Operation--Part : Compact Device Model--},
year={1995},
volume={E78-C},
number={12},
pages={1761-1772},
abstract={This work deals with thermal-noise modeling for silicon vertical bipolar junction transistors (BJTs) and relevant integrated circuits (ICs) operating at low currents. The two-junction BJT compact model is consistently derived from the thermal-noise generalization of the Shockley semiconductor equations developed in work which treats thermal noise as the noise associated with carrier velocity fluctuations. This model describes BJT with the Itô non-linear stochastic-differential-equation (SDE) system and is suitable for large-signal large-fluctuation analysis. It is shown that thermal noise in silicon p-n-junction diode contributes to "microplasma" noise. The above model opens way for a consistent-modeling-based design/optimization of bipolar device noise performance with the help of theory of Itô's SDEs.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - Thermal Noise in Silicon Bipolar Transistors and Circuits for Low-Current Operation--Part : Compact Device Model--
T2 - IEICE TRANSACTIONS on Electronics
SP - 1761
EP - 1772
AU - Yevgeny V. MAMONTOV
AU - Magnus WILLANDER
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1995
AB - This work deals with thermal-noise modeling for silicon vertical bipolar junction transistors (BJTs) and relevant integrated circuits (ICs) operating at low currents. The two-junction BJT compact model is consistently derived from the thermal-noise generalization of the Shockley semiconductor equations developed in work which treats thermal noise as the noise associated with carrier velocity fluctuations. This model describes BJT with the Itô non-linear stochastic-differential-equation (SDE) system and is suitable for large-signal large-fluctuation analysis. It is shown that thermal noise in silicon p-n-junction diode contributes to "microplasma" noise. The above model opens way for a consistent-modeling-based design/optimization of bipolar device noise performance with the help of theory of Itô's SDEs.
ER -