An Accurate FET Model for Microwave Nonlinear Circuit Simulation

Junko ONOMURA; Shigeru WATANABE; Susumu KAMIHASHI

An Accurate FET Model for Microwave Nonlinear Circuit Simulation

Junko ONOMURA, Shigeru WATANABE, Susumu KAMIHASHI

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We propose an accurate FET model for microwave nonlinear circuit simulation, which has been modified from the Statz model. We have greatly enhanced the accuracy of both dc and capacitance expressions, especially in the knee voltage region where I_ds begins to saturate. In the expression of dc characteristics, our model improves the accuracy by incorporating the drain-source voltage dependence of pinch-off voltage, the gate-source voltage dependence of knee voltage, and the non-square dependence of drain current against the gate-source voltage. The non-square-root voltage dependence of gate capacitances is considered as well. All modifications are simple and the parameter extraction is kept as simple as that of the Statz model. By using this model, good agreement has been obtained between simulated and measured characteristics of a GaAs FET. For the dc characteristics and the S-parameters, each of estimated error is within 5% and 10%. The model accuracy has been verified by comparison of simulated and measured results of power amplifier performances over a wide range of operating conditions.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.9 pp.1223-1228

Publication Date: 1995/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)

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Junko ONOMURA, Shigeru WATANABE, Susumu KAMIHASHI, "An Accurate FET Model for Microwave Nonlinear Circuit Simulation" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 9, pp. 1223-1228, September 1995, doi: .
Abstract: We propose an accurate FET model for microwave nonlinear circuit simulation, which has been modified from the Statz model. We have greatly enhanced the accuracy of both dc and capacitance expressions, especially in the knee voltage region where I_ds begins to saturate. In the expression of dc characteristics, our model improves the accuracy by incorporating the drain-source voltage dependence of pinch-off voltage, the gate-source voltage dependence of knee voltage, and the non-square dependence of drain current against the gate-source voltage. The non-square-root voltage dependence of gate capacitances is considered as well. All modifications are simple and the parameter extraction is kept as simple as that of the Statz model. By using this model, good agreement has been obtained between simulated and measured characteristics of a GaAs FET. For the dc characteristics and the S-parameters, each of estimated error is within 5% and 10%. The model accuracy has been verified by comparison of simulated and measured results of power amplifier performances over a wide range of operating conditions.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_9_1223/_p

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@ARTICLE{e78-c_9_1223,
author={Junko ONOMURA, Shigeru WATANABE, Susumu KAMIHASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Accurate FET Model for Microwave Nonlinear Circuit Simulation},
year={1995},
volume={E78-C},
number={9},
pages={1223-1228},
abstract={We propose an accurate FET model for microwave nonlinear circuit simulation, which has been modified from the Statz model. We have greatly enhanced the accuracy of both dc and capacitance expressions, especially in the knee voltage region where I_ds begins to saturate. In the expression of dc characteristics, our model improves the accuracy by incorporating the drain-source voltage dependence of pinch-off voltage, the gate-source voltage dependence of knee voltage, and the non-square dependence of drain current against the gate-source voltage. The non-square-root voltage dependence of gate capacitances is considered as well. All modifications are simple and the parameter extraction is kept as simple as that of the Statz model. By using this model, good agreement has been obtained between simulated and measured characteristics of a GaAs FET. For the dc characteristics and the S-parameters, each of estimated error is within 5% and 10%. The model accuracy has been verified by comparison of simulated and measured results of power amplifier performances over a wide range of operating conditions.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - An Accurate FET Model for Microwave Nonlinear Circuit Simulation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1223
EP - 1228
AU - Junko ONOMURA
AU - Shigeru WATANABE
AU - Susumu KAMIHASHI
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1995
AB - We propose an accurate FET model for microwave nonlinear circuit simulation, which has been modified from the Statz model. We have greatly enhanced the accuracy of both dc and capacitance expressions, especially in the knee voltage region where I_ds begins to saturate. In the expression of dc characteristics, our model improves the accuracy by incorporating the drain-source voltage dependence of pinch-off voltage, the gate-source voltage dependence of knee voltage, and the non-square dependence of drain current against the gate-source voltage. The non-square-root voltage dependence of gate capacitances is considered as well. All modifications are simple and the parameter extraction is kept as simple as that of the Statz model. By using this model, good agreement has been obtained between simulated and measured characteristics of a GaAs FET. For the dc characteristics and the S-parameters, each of estimated error is within 5% and 10%. The model accuracy has been verified by comparison of simulated and measured results of power amplifier performances over a wide range of operating conditions.
ER -