A Low-Voltage GaAs One-Chip Oscillator IC for Laser-Diode Noise Suppression

Tsuyoshi TANAKA; Hideo NAGAI; Daisuke UEDA

A Low-Voltage GaAs One-Chip Oscillator IC for Laser-Diode Noise Suppression

Tsuyoshi TANAKA, Hideo NAGAI, Daisuke UEDA

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A GaAs defferential oscillator IC with on-chip LC resonator has been developed for suppressing the relative intensity noise (RIN) of a laser diode. The relationship between the Q-factor and minimum supply voltage for oscillation is fully described. In view of reducing the present LC resonator, we made use of BST (Barium Strontium Titanate) capacitor to make the resonator without increasing the chip area. The oscillation frequency is stable since it's determined by the geometry of the resonator. The experimentally fabricated oscillator IC achieved the output power of 12 dBm at the frequency of 600 MHz with voltage/current conditions of 2 V/20 mA. The present IC keeps quite stable RIN value less than -138 dB/Hz under the light-feedback condition up to 10%.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.9 pp.1246-1251

Publication Date: 1995/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)

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Tsuyoshi TANAKA, Hideo NAGAI, Daisuke UEDA, "A Low-Voltage GaAs One-Chip Oscillator IC for Laser-Diode Noise Suppression" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 9, pp. 1246-1251, September 1995, doi: .
Abstract: A GaAs defferential oscillator IC with on-chip LC resonator has been developed for suppressing the relative intensity noise (RIN) of a laser diode. The relationship between the Q-factor and minimum supply voltage for oscillation is fully described. In view of reducing the present LC resonator, we made use of BST (Barium Strontium Titanate) capacitor to make the resonator without increasing the chip area. The oscillation frequency is stable since it's determined by the geometry of the resonator. The experimentally fabricated oscillator IC achieved the output power of 12 dBm at the frequency of 600 MHz with voltage/current conditions of 2 V/20 mA. The present IC keeps quite stable RIN value less than -138 dB/Hz under the light-feedback condition up to 10%.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_9_1246/_p

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@ARTICLE{e78-c_9_1246,
author={Tsuyoshi TANAKA, Hideo NAGAI, Daisuke UEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low-Voltage GaAs One-Chip Oscillator IC for Laser-Diode Noise Suppression},
year={1995},
volume={E78-C},
number={9},
pages={1246-1251},
abstract={A GaAs defferential oscillator IC with on-chip LC resonator has been developed for suppressing the relative intensity noise (RIN) of a laser diode. The relationship between the Q-factor and minimum supply voltage for oscillation is fully described. In view of reducing the present LC resonator, we made use of BST (Barium Strontium Titanate) capacitor to make the resonator without increasing the chip area. The oscillation frequency is stable since it's determined by the geometry of the resonator. The experimentally fabricated oscillator IC achieved the output power of 12 dBm at the frequency of 600 MHz with voltage/current conditions of 2 V/20 mA. The present IC keeps quite stable RIN value less than -138 dB/Hz under the light-feedback condition up to 10%.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - A Low-Voltage GaAs One-Chip Oscillator IC for Laser-Diode Noise Suppression
T2 - IEICE TRANSACTIONS on Electronics
SP - 1246
EP - 1251
AU - Tsuyoshi TANAKA
AU - Hideo NAGAI
AU - Daisuke UEDA
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1995
AB - A GaAs defferential oscillator IC with on-chip LC resonator has been developed for suppressing the relative intensity noise (RIN) of a laser diode. The relationship between the Q-factor and minimum supply voltage for oscillation is fully described. In view of reducing the present LC resonator, we made use of BST (Barium Strontium Titanate) capacitor to make the resonator without increasing the chip area. The oscillation frequency is stable since it's determined by the geometry of the resonator. The experimentally fabricated oscillator IC achieved the output power of 12 dBm at the frequency of 600 MHz with voltage/current conditions of 2 V/20 mA. The present IC keeps quite stable RIN value less than -138 dB/Hz under the light-feedback condition up to 10%.
ER -