A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs

Kazuya NISHIHORI; Atsushi KAMEYAMA; Yoshiaki KITAURA; Yoshikazu TANABE; Masakatsu MIHARA; Misao YOSHIMURA; Mayumi HIROSE; Naotaka UCHITOMI

A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs

Kazuya NISHIHORI, Atsushi KAMEYAMA, Yoshiaki KITAURA, Yoshikazu TANABE, Masakatsu MIHARA, Misao YOSHIMURA, Mayumi HIROSE, Naotaka UCHITOMI

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We report on 1.9-GHz performance of the Buried-Channel self-aligned WN/W-gate GaAs MESFET (BC-MESFET) for use in digital mobile telephone handsets with low power consumption. The BC-MESFET incorporates undoped i-GaAs epitaxial-grown surface layer on the ion-implanted channel. Both the power and noise performance of the BC-MESFET are superior to the conventional MESFET. The 0.6-µm gate power BC-MESFET exhibits a high power-added efficiency of 57% at 1-dB gain compression, which leads to low power dissipation of the handset. This power performance is attributed to high breakdown voltage which the undoped i-GaAs surface layer has brought about. The BC-MESFET has also shown a minimum noise figure of below 0.4 dB. Taking the IC-oriented fabrication process of the BC-MESFET into consideration, these FET performances demonstrate that the BC-MESFET is suitable for the single-chip MMIC that integrates RF front-end blocks for the 1.9-GHz small-size mobile telephone handset with long battery lifetime.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.12 pp.1586-1591

Publication Date: 1997/12/25

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Type of Manuscript: Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)

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Kazuya NISHIHORI, Atsushi KAMEYAMA, Yoshiaki KITAURA, Yoshikazu TANABE, Masakatsu MIHARA, Misao YOSHIMURA, Mayumi HIROSE, Naotaka UCHITOMI, "A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 12, pp. 1586-1591, December 1997, doi: .
Abstract: We report on 1.9-GHz performance of the Buried-Channel self-aligned WN/W-gate GaAs MESFET (BC-MESFET) for use in digital mobile telephone handsets with low power consumption. The BC-MESFET incorporates undoped i-GaAs epitaxial-grown surface layer on the ion-implanted channel. Both the power and noise performance of the BC-MESFET are superior to the conventional MESFET. The 0.6-µm gate power BC-MESFET exhibits a high power-added efficiency of 57% at 1-dB gain compression, which leads to low power dissipation of the handset. This power performance is attributed to high breakdown voltage which the undoped i-GaAs surface layer has brought about. The BC-MESFET has also shown a minimum noise figure of below 0.4 dB. Taking the IC-oriented fabrication process of the BC-MESFET into consideration, these FET performances demonstrate that the BC-MESFET is suitable for the single-chip MMIC that integrates RF front-end blocks for the 1.9-GHz small-size mobile telephone handset with long battery lifetime.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e80-c_12_1586/_p

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@ARTICLE{e80-c_12_1586,
author={Kazuya NISHIHORI, Atsushi KAMEYAMA, Yoshiaki KITAURA, Yoshikazu TANABE, Masakatsu MIHARA, Misao YOSHIMURA, Mayumi HIROSE, Naotaka UCHITOMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs},
year={1997},
volume={E80-C},
number={12},
pages={1586-1591},
abstract={We report on 1.9-GHz performance of the Buried-Channel self-aligned WN/W-gate GaAs MESFET (BC-MESFET) for use in digital mobile telephone handsets with low power consumption. The BC-MESFET incorporates undoped i-GaAs epitaxial-grown surface layer on the ion-implanted channel. Both the power and noise performance of the BC-MESFET are superior to the conventional MESFET. The 0.6-µm gate power BC-MESFET exhibits a high power-added efficiency of 57% at 1-dB gain compression, which leads to low power dissipation of the handset. This power performance is attributed to high breakdown voltage which the undoped i-GaAs surface layer has brought about. The BC-MESFET has also shown a minimum noise figure of below 0.4 dB. Taking the IC-oriented fabrication process of the BC-MESFET into consideration, these FET performances demonstrate that the BC-MESFET is suitable for the single-chip MMIC that integrates RF front-end blocks for the 1.9-GHz small-size mobile telephone handset with long battery lifetime.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1586
EP - 1591
AU - Kazuya NISHIHORI
AU - Atsushi KAMEYAMA
AU - Yoshiaki KITAURA
AU - Yoshikazu TANABE
AU - Masakatsu MIHARA
AU - Misao YOSHIMURA
AU - Mayumi HIROSE
AU - Naotaka UCHITOMI
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1997
AB - We report on 1.9-GHz performance of the Buried-Channel self-aligned WN/W-gate GaAs MESFET (BC-MESFET) for use in digital mobile telephone handsets with low power consumption. The BC-MESFET incorporates undoped i-GaAs epitaxial-grown surface layer on the ion-implanted channel. Both the power and noise performance of the BC-MESFET are superior to the conventional MESFET. The 0.6-µm gate power BC-MESFET exhibits a high power-added efficiency of 57% at 1-dB gain compression, which leads to low power dissipation of the handset. This power performance is attributed to high breakdown voltage which the undoped i-GaAs surface layer has brought about. The BC-MESFET has also shown a minimum noise figure of below 0.4 dB. Taking the IC-oriented fabrication process of the BC-MESFET into consideration, these FET performances demonstrate that the BC-MESFET is suitable for the single-chip MMIC that integrates RF front-end blocks for the 1.9-GHz small-size mobile telephone handset with long battery lifetime.
ER -