Dual-Frequency Matching Technique and Its Application to an Octave-Band (30-60 GHz) MMIC Amplifier

Hiroki NAKAJIMA; Masahiro MURAGUCHI

Dual-Frequency Matching Technique and Its Application to an Octave-Band (30-60 GHz) MMIC Amplifier

Hiroki NAKAJIMA, Masahiro MURAGUCHI

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A single-stage dual-frequency matching network that can simultaneously transform a transistor reflection coefficient to zero at two separate frequencies (a lower frequency f_L and a higher frequency f_H) is proposed. The network is made by adding a shorted stub, the length of which is a quarter-wavelength at f_H, to a conventional L-section matching network composed of a series transmission line and an open stub. The concept of dual-frequency matching is based on the fact that the synthesized shunt admittance of the open and shorted stubs changes from capacitive at f_H to inductive at f_L. By means of the single-stage matching network, broad-band amplifier performance, the bandwidth of which is given as (f_H-f_L), can be easily obtained with almost the same design procedures and circuit area used for conventional narrow-band amplifiers. In this paper, the function of the dual-frequency matching network is analyzed in detail and an application of the matching technique to a two-stage amplifier is described. A broad-band performance of |S₂₁|>7.4 dB at 27.0-62.5 GHz has been achieved with a GaAs P-HEMT two-stage MMIC amplifier.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.12 pp.1614-1621

Publication Date: 1997/12/25

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Category: Microwave and Millimeter Wave Technology

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Hiroki NAKAJIMA, Masahiro MURAGUCHI, "Dual-Frequency Matching Technique and Its Application to an Octave-Band (30-60 GHz) MMIC Amplifier" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 12, pp. 1614-1621, December 1997, doi: .
Abstract: A single-stage dual-frequency matching network that can simultaneously transform a transistor reflection coefficient to zero at two separate frequencies (a lower frequency f_L and a higher frequency f_H) is proposed. The network is made by adding a shorted stub, the length of which is a quarter-wavelength at f_H, to a conventional L-section matching network composed of a series transmission line and an open stub. The concept of dual-frequency matching is based on the fact that the synthesized shunt admittance of the open and shorted stubs changes from capacitive at f_H to inductive at f_L. By means of the single-stage matching network, broad-band amplifier performance, the bandwidth of which is given as (f_H-f_L), can be easily obtained with almost the same design procedures and circuit area used for conventional narrow-band amplifiers. In this paper, the function of the dual-frequency matching network is analyzed in detail and an application of the matching technique to a two-stage amplifier is described. A broad-band performance of |S₂₁|>7.4 dB at 27.0-62.5 GHz has been achieved with a GaAs P-HEMT two-stage MMIC amplifier.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e80-c_12_1614/_p

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@ARTICLE{e80-c_12_1614,
author={Hiroki NAKAJIMA, Masahiro MURAGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Dual-Frequency Matching Technique and Its Application to an Octave-Band (30-60 GHz) MMIC Amplifier},
year={1997},
volume={E80-C},
number={12},
pages={1614-1621},
abstract={A single-stage dual-frequency matching network that can simultaneously transform a transistor reflection coefficient to zero at two separate frequencies (a lower frequency f_L and a higher frequency f_H) is proposed. The network is made by adding a shorted stub, the length of which is a quarter-wavelength at f_H, to a conventional L-section matching network composed of a series transmission line and an open stub. The concept of dual-frequency matching is based on the fact that the synthesized shunt admittance of the open and shorted stubs changes from capacitive at f_H to inductive at f_L. By means of the single-stage matching network, broad-band amplifier performance, the bandwidth of which is given as (f_H-f_L), can be easily obtained with almost the same design procedures and circuit area used for conventional narrow-band amplifiers. In this paper, the function of the dual-frequency matching network is analyzed in detail and an application of the matching technique to a two-stage amplifier is described. A broad-band performance of |S₂₁|>7.4 dB at 27.0-62.5 GHz has been achieved with a GaAs P-HEMT two-stage MMIC amplifier.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - Dual-Frequency Matching Technique and Its Application to an Octave-Band (30-60 GHz) MMIC Amplifier
T2 - IEICE TRANSACTIONS on Electronics
SP - 1614
EP - 1621
AU - Hiroki NAKAJIMA
AU - Masahiro MURAGUCHI
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1997
AB - A single-stage dual-frequency matching network that can simultaneously transform a transistor reflection coefficient to zero at two separate frequencies (a lower frequency f_L and a higher frequency f_H) is proposed. The network is made by adding a shorted stub, the length of which is a quarter-wavelength at f_H, to a conventional L-section matching network composed of a series transmission line and an open stub. The concept of dual-frequency matching is based on the fact that the synthesized shunt admittance of the open and shorted stubs changes from capacitive at f_H to inductive at f_L. By means of the single-stage matching network, broad-band amplifier performance, the bandwidth of which is given as (f_H-f_L), can be easily obtained with almost the same design procedures and circuit area used for conventional narrow-band amplifiers. In this paper, the function of the dual-frequency matching network is analyzed in detail and an application of the matching technique to a two-stage amplifier is described. A broad-band performance of |S₂₁|>7.4 dB at 27.0-62.5 GHz has been achieved with a GaAs P-HEMT two-stage MMIC amplifier.
ER -