A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9 GHz PHS

Atsushi KAMEYAMA; Katsue K.KAWAKYU; Yoshiko IKEDA; Masami NAGAOKA; Kenji ISHIDA; Tomohiro NITTA; Misao YOSHIMURA; Yoshiaki KITAURA; Naotaka UCHITOMI

A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9 GHz PHS

Atsushi KAMEYAMA, Katsue K.KAWAKYU, Yoshiko IKEDA, Masami NAGAOKA, Kenji ISHIDA, Tomohiro NITTA, Misao YOSHIMURA, Yoshiaki KITAURA, Naotaka UCHITOMI

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A GaAs SPDT switch IC operating at a low power supply voltage of 2.7 V has been developed for use in 1.9 GHz band personal handy phone system (PHS). In combination with MESFETs with low on-resistance and high breakdown voltage, the switch IC adopts parallel-LC resonant circuits and utilizes both stacked FETs and an additional shunt capacitor at the receiver side in order to realize low insertion loss, high isolation and low distortion characteristics. An insertion loss of 0.55 dB and an isolation of 35.8 dB were obtained at 1.9 GHz. The IC also achieved an output power of 25.0 dBm at 1 dB gain compression point, a second order distortion of -54.3 dBc and an adjacent channel leakage power of -66 dBc at 600 kHz apart from 1.9 GHz at 19 dBm output power.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.6 pp.788-793

Publication Date: 1997/06/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)

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Atsushi KAMEYAMA, Katsue K.KAWAKYU, Yoshiko IKEDA, Masami NAGAOKA, Kenji ISHIDA, Tomohiro NITTA, Misao YOSHIMURA, Yoshiaki KITAURA, Naotaka UCHITOMI, "A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9 GHz PHS" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 6, pp. 788-793, June 1997, doi: .
Abstract: A GaAs SPDT switch IC operating at a low power supply voltage of 2.7 V has been developed for use in 1.9 GHz band personal handy phone system (PHS). In combination with MESFETs with low on-resistance and high breakdown voltage, the switch IC adopts parallel-LC resonant circuits and utilizes both stacked FETs and an additional shunt capacitor at the receiver side in order to realize low insertion loss, high isolation and low distortion characteristics. An insertion loss of 0.55 dB and an isolation of 35.8 dB were obtained at 1.9 GHz. The IC also achieved an output power of 25.0 dBm at 1 dB gain compression point, a second order distortion of -54.3 dBc and an adjacent channel leakage power of -66 dBc at 600 kHz apart from 1.9 GHz at 19 dBm output power.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e80-c_6_788/_p

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@ARTICLE{e80-c_6_788,
author={Atsushi KAMEYAMA, Katsue K.KAWAKYU, Yoshiko IKEDA, Masami NAGAOKA, Kenji ISHIDA, Tomohiro NITTA, Misao YOSHIMURA, Yoshiaki KITAURA, Naotaka UCHITOMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9 GHz PHS},
year={1997},
volume={E80-C},
number={6},
pages={788-793},
abstract={A GaAs SPDT switch IC operating at a low power supply voltage of 2.7 V has been developed for use in 1.9 GHz band personal handy phone system (PHS). In combination with MESFETs with low on-resistance and high breakdown voltage, the switch IC adopts parallel-LC resonant circuits and utilizes both stacked FETs and an additional shunt capacitor at the receiver side in order to realize low insertion loss, high isolation and low distortion characteristics. An insertion loss of 0.55 dB and an isolation of 35.8 dB were obtained at 1.9 GHz. The IC also achieved an output power of 25.0 dBm at 1 dB gain compression point, a second order distortion of -54.3 dBc and an adjacent channel leakage power of -66 dBc at 600 kHz apart from 1.9 GHz at 19 dBm output power.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9 GHz PHS
T2 - IEICE TRANSACTIONS on Electronics
SP - 788
EP - 793
AU - Atsushi KAMEYAMA
AU - Katsue K.KAWAKYU
AU - Yoshiko IKEDA
AU - Masami NAGAOKA
AU - Kenji ISHIDA
AU - Tomohiro NITTA
AU - Misao YOSHIMURA
AU - Yoshiaki KITAURA
AU - Naotaka UCHITOMI
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1997
AB - A GaAs SPDT switch IC operating at a low power supply voltage of 2.7 V has been developed for use in 1.9 GHz band personal handy phone system (PHS). In combination with MESFETs with low on-resistance and high breakdown voltage, the switch IC adopts parallel-LC resonant circuits and utilizes both stacked FETs and an additional shunt capacitor at the receiver side in order to realize low insertion loss, high isolation and low distortion characteristics. An insertion loss of 0.55 dB and an isolation of 35.8 dB were obtained at 1.9 GHz. The IC also achieved an output power of 25.0 dBm at 1 dB gain compression point, a second order distortion of -54.3 dBc and an adjacent channel leakage power of -66 dBc at 600 kHz apart from 1.9 GHz at 19 dBm output power.
ER -