A Study of Electrical Characteristics Improvements in Sub-0.1 µm Gate Length MOSFETs by Low Temperature Operation

Morikazu TSUNO; Shin YOKOYAMA; Kentaro SHIBAHARA

A Study of Electrical Characteristics Improvements in Sub-0.1 µm Gate Length MOSFETs by Low Temperature Operation

Morikazu TSUNO, Shin YOKOYAMA, Kentaro SHIBAHARA

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MOSFETs with sub-0.1 µm gate length were fabricated, and their low temperature operation was investigated. The drain current for drain voltage of 2 V increased monotonously as temperature was lowered to 15 K without an influence of the freeze-out effect. Moreover, the increase in the drain current was enhanced by the gate length reduction. The hot-carrier effect at low temperature was also investigated. Impact-ionization decreased as temperature was lowered under the condition of drain voltage 2 V. The decreasing ratio was enhanced as gate length became shorter. We consider this phenomenon is attributed to the non-steady-stationary effect. As a result, device degradation by DC stressing was reduced at 77 K in comparison with room temperature. In the case of 0.1 µm MOSFET, drain current was not degraded in condition of DC stress with gate- and drain-voltage was 1.5 V.

Publication: IEICE TRANSACTIONS on Electronics Vol.E81-C No.12 pp.1913-1917

Publication Date: 1998/12/25

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Category: Semiconductor Materials and Devices

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Morikazu TSUNO, Shin YOKOYAMA, Kentaro SHIBAHARA, "A Study of Electrical Characteristics Improvements in Sub-0.1 µm Gate Length MOSFETs by Low Temperature Operation" in IEICE TRANSACTIONS on Electronics, vol. E81-C, no. 12, pp. 1913-1917, December 1998, doi: .
Abstract: MOSFETs with sub-0.1 µm gate length were fabricated, and their low temperature operation was investigated. The drain current for drain voltage of 2 V increased monotonously as temperature was lowered to 15 K without an influence of the freeze-out effect. Moreover, the increase in the drain current was enhanced by the gate length reduction. The hot-carrier effect at low temperature was also investigated. Impact-ionization decreased as temperature was lowered under the condition of drain voltage 2 V. The decreasing ratio was enhanced as gate length became shorter. We consider this phenomenon is attributed to the non-steady-stationary effect. As a result, device degradation by DC stressing was reduced at 77 K in comparison with room temperature. In the case of 0.1 µm MOSFET, drain current was not degraded in condition of DC stress with gate- and drain-voltage was 1.5 V.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e81-c_12_1913/_p

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@ARTICLE{e81-c_12_1913,
author={Morikazu TSUNO, Shin YOKOYAMA, Kentaro SHIBAHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Study of Electrical Characteristics Improvements in Sub-0.1 µm Gate Length MOSFETs by Low Temperature Operation},
year={1998},
volume={E81-C},
number={12},
pages={1913-1917},
abstract={MOSFETs with sub-0.1 µm gate length were fabricated, and their low temperature operation was investigated. The drain current for drain voltage of 2 V increased monotonously as temperature was lowered to 15 K without an influence of the freeze-out effect. Moreover, the increase in the drain current was enhanced by the gate length reduction. The hot-carrier effect at low temperature was also investigated. Impact-ionization decreased as temperature was lowered under the condition of drain voltage 2 V. The decreasing ratio was enhanced as gate length became shorter. We consider this phenomenon is attributed to the non-steady-stationary effect. As a result, device degradation by DC stressing was reduced at 77 K in comparison with room temperature. In the case of 0.1 µm MOSFET, drain current was not degraded in condition of DC stress with gate- and drain-voltage was 1.5 V.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - A Study of Electrical Characteristics Improvements in Sub-0.1 µm Gate Length MOSFETs by Low Temperature Operation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1913
EP - 1917
AU - Morikazu TSUNO
AU - Shin YOKOYAMA
AU - Kentaro SHIBAHARA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1998
AB - MOSFETs with sub-0.1 µm gate length were fabricated, and their low temperature operation was investigated. The drain current for drain voltage of 2 V increased monotonously as temperature was lowered to 15 K without an influence of the freeze-out effect. Moreover, the increase in the drain current was enhanced by the gate length reduction. The hot-carrier effect at low temperature was also investigated. Impact-ionization decreased as temperature was lowered under the condition of drain voltage 2 V. The decreasing ratio was enhanced as gate length became shorter. We consider this phenomenon is attributed to the non-steady-stationary effect. As a result, device degradation by DC stressing was reduced at 77 K in comparison with room temperature. In the case of 0.1 µm MOSFET, drain current was not degraded in condition of DC stress with gate- and drain-voltage was 1.5 V.
ER -