Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure

Naohiro TSURUMI; Motonori ISHII; Masaaki NISHIJIMA; Manabu YANAGIHARA; Tsuyoshi TANAKA; Daisuke UEDA

Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure

Naohiro TSURUMI, Motonori ISHII, Masaaki NISHIJIMA, Manabu YANAGIHARA, Tsuyoshi TANAKA, Daisuke UEDA

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InGaP/GaAs HBT with novel ledge coupled capacitor (LCC) structure has been proposed and demonstrated for the first time. The LCC employs an extrinsic InGaP ledge layer as a capacitor parallel to the base resistor. This configuration enables feeding RF signals directly into the base without passing them through the base resistor. With the fabricated HBT, no increase of leakage current between emitter and base electrode was observed. The maximum oscillation frequency (f_max) of the HBT was improved by 10 GHz as compared with an HBT without the LCC.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.2004-2009

Publication Date: 2003/10/01

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Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)

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Naohiro TSURUMI, Motonori ISHII, Masaaki NISHIJIMA, Manabu YANAGIHARA, Tsuyoshi TANAKA, Daisuke UEDA, "Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 10, pp. 2004-2009, October 2003, doi: .
Abstract: InGaP/GaAs HBT with novel ledge coupled capacitor (LCC) structure has been proposed and demonstrated for the first time. The LCC employs an extrinsic InGaP ledge layer as a capacitor parallel to the base resistor. This configuration enables feeding RF signals directly into the base without passing them through the base resistor. With the fabricated HBT, no increase of leakage current between emitter and base electrode was observed. The maximum oscillation frequency (f_max) of the HBT was improved by 10 GHz as compared with an HBT without the LCC.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2004/_p

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@ARTICLE{e86-c_10_2004,
author={Naohiro TSURUMI, Motonori ISHII, Masaaki NISHIJIMA, Manabu YANAGIHARA, Tsuyoshi TANAKA, Daisuke UEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure},
year={2003},
volume={E86-C},
number={10},
pages={2004-2009},
abstract={InGaP/GaAs HBT with novel ledge coupled capacitor (LCC) structure has been proposed and demonstrated for the first time. The LCC employs an extrinsic InGaP ledge layer as a capacitor parallel to the base resistor. This configuration enables feeding RF signals directly into the base without passing them through the base resistor. With the fabricated HBT, no increase of leakage current between emitter and base electrode was observed. The maximum oscillation frequency (f_max) of the HBT was improved by 10 GHz as compared with an HBT without the LCC.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure
T2 - IEICE TRANSACTIONS on Electronics
SP - 2004
EP - 2009
AU - Naohiro TSURUMI
AU - Motonori ISHII
AU - Masaaki NISHIJIMA
AU - Manabu YANAGIHARA
AU - Tsuyoshi TANAKA
AU - Daisuke UEDA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - InGaP/GaAs HBT with novel ledge coupled capacitor (LCC) structure has been proposed and demonstrated for the first time. The LCC employs an extrinsic InGaP ledge layer as a capacitor parallel to the base resistor. This configuration enables feeding RF signals directly into the base without passing them through the base resistor. With the fabricated HBT, no increase of leakage current between emitter and base electrode was observed. The maximum oscillation frequency (f_max) of the HBT was improved by 10 GHz as compared with an HBT without the LCC.
ER -