Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs

Takashi INOUE; Yuji ANDO; Kensuke KASAHARA; Yasuhiro OKAMOTO; Tatsuo NAKAYAMA; Hironobu MIYAMOTO; Masaaki KUZUHARA

Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs

Takashi INOUE, Yuji ANDO, Kensuke KASAHARA, Yasuhiro OKAMOTO, Tatsuo NAKAYAMA, Hironobu MIYAMOTO, Masaaki KUZUHARA

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High-frequency characterization and delay-time analysis have been performed for a short channel AlGaN/GaN heterojunction FET. The fabricated device with a short gate length (L_g) of 0.07 µm exhibited an extrinsic current gain cutoff frequency of 81 GHz and a maximum frequency of oscillation of 190 GHz with a maximum stable gain (MSG) of 8.2 dB at 60 GHz. A new scheme for the delay-time analysis was proposed, in which the effects of rather large series resistance R_S + R_D are properly taken into account. By applying the new scheme to a device with L_g=0.25 µm, we obtained an effective high-field electron velocity of 1.7510⁷ cm/s, which is consistent with our previous results calculated using Monte Carlo simulation.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.2065-2070

Publication Date: 2003/10/01

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Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)

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Takashi INOUE, Yuji ANDO, Kensuke KASAHARA, Yasuhiro OKAMOTO, Tatsuo NAKAYAMA, Hironobu MIYAMOTO, Masaaki KUZUHARA, "Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 10, pp. 2065-2070, October 2003, doi: .
Abstract: High-frequency characterization and delay-time analysis have been performed for a short channel AlGaN/GaN heterojunction FET. The fabricated device with a short gate length (L_g) of 0.07 µm exhibited an extrinsic current gain cutoff frequency of 81 GHz and a maximum frequency of oscillation of 190 GHz with a maximum stable gain (MSG) of 8.2 dB at 60 GHz. A new scheme for the delay-time analysis was proposed, in which the effects of rather large series resistance R_S + R_D are properly taken into account. By applying the new scheme to a device with L_g=0.25 µm, we obtained an effective high-field electron velocity of 1.7510⁷ cm/s, which is consistent with our previous results calculated using Monte Carlo simulation.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2065/_p

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@ARTICLE{e86-c_10_2065,
author={Takashi INOUE, Yuji ANDO, Kensuke KASAHARA, Yasuhiro OKAMOTO, Tatsuo NAKAYAMA, Hironobu MIYAMOTO, Masaaki KUZUHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs},
year={2003},
volume={E86-C},
number={10},
pages={2065-2070},
abstract={High-frequency characterization and delay-time analysis have been performed for a short channel AlGaN/GaN heterojunction FET. The fabricated device with a short gate length (L_g) of 0.07 µm exhibited an extrinsic current gain cutoff frequency of 81 GHz and a maximum frequency of oscillation of 190 GHz with a maximum stable gain (MSG) of 8.2 dB at 60 GHz. A new scheme for the delay-time analysis was proposed, in which the effects of rather large series resistance R_S + R_D are properly taken into account. By applying the new scheme to a device with L_g=0.25 µm, we obtained an effective high-field electron velocity of 1.7510⁷ cm/s, which is consistent with our previous results calculated using Monte Carlo simulation.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 2065
EP - 2070
AU - Takashi INOUE
AU - Yuji ANDO
AU - Kensuke KASAHARA
AU - Yasuhiro OKAMOTO
AU - Tatsuo NAKAYAMA
AU - Hironobu MIYAMOTO
AU - Masaaki KUZUHARA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - High-frequency characterization and delay-time analysis have been performed for a short channel AlGaN/GaN heterojunction FET. The fabricated device with a short gate length (L_g) of 0.07 µm exhibited an extrinsic current gain cutoff frequency of 81 GHz and a maximum frequency of oscillation of 190 GHz with a maximum stable gain (MSG) of 8.2 dB at 60 GHz. A new scheme for the delay-time analysis was proposed, in which the effects of rather large series resistance R_S + R_D are properly taken into account. By applying the new scheme to a device with L_g=0.25 µm, we obtained an effective high-field electron velocity of 1.7510⁷ cm/s, which is consistent with our previous results calculated using Monte Carlo simulation.
ER -