Experimental Study on Fully Integrated Active Guard Band Filters for Suppressing Substrate Noise in Sub-Micron CMOS Processes for System-on-a-Chip

Keiko Makie-FUKUDA; Toshiro TSUKADA

Experimental Study on Fully Integrated Active Guard Band Filters for Suppressing Substrate Noise in Sub-Micron CMOS Processes for System-on-a-Chip

Keiko Makie-FUKUDA, Toshiro TSUKADA

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This paper describes fully integrated active guard band filters for suppressing the substrate coupling noise and their noise suppression effect measured by test chip experiments. The noise cancellation circuit of the active guard band filters simply consists of an inverter and a source follower. The substrate noise suppression effect was measured by using a test chip fabricated in a 0.18 µm CMOS triple-well process for system-on-a-chip. The noise with the filter was less than 5% of that without the filter and the noise suppression effect was observed from 1 MHz to 200 MHz by the statistical measurement of the voltage comparator. The noise suppression effect was also observed for actual digital switching noise produced by digital inverters. Configuration of the active guard band filter was investigated by simulation and it is shown that high and uniform noise suppression effect is achieved by placing the guard bands in the L-shape around the target triple-well area on the p-substrate.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.1 pp.89-96

Publication Date: 2003/01/01

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Type of Manuscript: PAPER

Category: Integrated Electronics

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Keiko Makie-FUKUDA, Toshiro TSUKADA, "Experimental Study on Fully Integrated Active Guard Band Filters for Suppressing Substrate Noise in Sub-Micron CMOS Processes for System-on-a-Chip" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 1, pp. 89-96, January 2003, doi: .
Abstract: This paper describes fully integrated active guard band filters for suppressing the substrate coupling noise and their noise suppression effect measured by test chip experiments. The noise cancellation circuit of the active guard band filters simply consists of an inverter and a source follower. The substrate noise suppression effect was measured by using a test chip fabricated in a 0.18 µm CMOS triple-well process for system-on-a-chip. The noise with the filter was less than 5% of that without the filter and the noise suppression effect was observed from 1 MHz to 200 MHz by the statistical measurement of the voltage comparator. The noise suppression effect was also observed for actual digital switching noise produced by digital inverters. Configuration of the active guard band filter was investigated by simulation and it is shown that high and uniform noise suppression effect is achieved by placing the guard bands in the L-shape around the target triple-well area on the p-substrate.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_1_89/_p

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@ARTICLE{e86-c_1_89,
author={Keiko Makie-FUKUDA, Toshiro TSUKADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Experimental Study on Fully Integrated Active Guard Band Filters for Suppressing Substrate Noise in Sub-Micron CMOS Processes for System-on-a-Chip},
year={2003},
volume={E86-C},
number={1},
pages={89-96},
abstract={This paper describes fully integrated active guard band filters for suppressing the substrate coupling noise and their noise suppression effect measured by test chip experiments. The noise cancellation circuit of the active guard band filters simply consists of an inverter and a source follower. The substrate noise suppression effect was measured by using a test chip fabricated in a 0.18 µm CMOS triple-well process for system-on-a-chip. The noise with the filter was less than 5% of that without the filter and the noise suppression effect was observed from 1 MHz to 200 MHz by the statistical measurement of the voltage comparator. The noise suppression effect was also observed for actual digital switching noise produced by digital inverters. Configuration of the active guard band filter was investigated by simulation and it is shown that high and uniform noise suppression effect is achieved by placing the guard bands in the L-shape around the target triple-well area on the p-substrate.},
keywords={},
doi={},
ISSN={},
month={January},}

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TY - JOUR
TI - Experimental Study on Fully Integrated Active Guard Band Filters for Suppressing Substrate Noise in Sub-Micron CMOS Processes for System-on-a-Chip
T2 - IEICE TRANSACTIONS on Electronics
SP - 89
EP - 96
AU - Keiko Makie-FUKUDA
AU - Toshiro TSUKADA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2003
AB - This paper describes fully integrated active guard band filters for suppressing the substrate coupling noise and their noise suppression effect measured by test chip experiments. The noise cancellation circuit of the active guard band filters simply consists of an inverter and a source follower. The substrate noise suppression effect was measured by using a test chip fabricated in a 0.18 µm CMOS triple-well process for system-on-a-chip. The noise with the filter was less than 5% of that without the filter and the noise suppression effect was observed from 1 MHz to 200 MHz by the statistical measurement of the voltage comparator. The noise suppression effect was also observed for actual digital switching noise produced by digital inverters. Configuration of the active guard band filter was investigated by simulation and it is shown that high and uniform noise suppression effect is achieved by placing the guard bands in the L-shape around the target triple-well area on the p-substrate.
ER -