Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation

Fabian M. BUFLER; Christoph ZECHNER; Andreas SCHENK; Wolfgang FICHTNER

Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation

Fabian M. BUFLER, Christoph ZECHNER, Andreas SCHENK, Wolfgang FICHTNER

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The validity and capability of an iterative coupling scheme between single-particle frozen-field Monte Carlo simulations and nonlinear Poisson solutions for achieving self-consistency is investigated. For this purpose, a realistic 0.1 µm lightly-doped-drain (LDD) n-MOSFET with a maximum doping level of about 2.5 10²⁰ cm^-3 is simulated. It is found that taking the drift-diffusion (DD) or the hydrodynamic (HD) model as initial simulation leads to the same Monte Carlo result for the drain current. This shows that different electron densities taken either from a DD or a HD simulation in the bulk region, which is never visited by Monte Carlo electrons, have a negligible influence on the solution of the Poisson equation. For the device investigated about ten iterations are necessary to reach the stationary state after which gathering of cumulative averages can begin. Together with the absence of stability problems at high doping levels this makes the self-consistent single-particle approach (SPARTA) a robust and efficient method for the simulation of nanoscale MOSFETs where quasi-ballistic transport is crucial for the on-current.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.3 pp.308-313

Publication Date: 2003/03/01

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Type of Manuscript: Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))

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Fabian M. BUFLER, Christoph ZECHNER, Andreas SCHENK, Wolfgang FICHTNER, "Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 3, pp. 308-313, March 2003, doi: .
Abstract: The validity and capability of an iterative coupling scheme between single-particle frozen-field Monte Carlo simulations and nonlinear Poisson solutions for achieving self-consistency is investigated. For this purpose, a realistic 0.1 µm lightly-doped-drain (LDD) n-MOSFET with a maximum doping level of about 2.5 10²⁰ cm^-3 is simulated. It is found that taking the drift-diffusion (DD) or the hydrodynamic (HD) model as initial simulation leads to the same Monte Carlo result for the drain current. This shows that different electron densities taken either from a DD or a HD simulation in the bulk region, which is never visited by Monte Carlo electrons, have a negligible influence on the solution of the Poisson equation. For the device investigated about ten iterations are necessary to reach the stationary state after which gathering of cumulative averages can begin. Together with the absence of stability problems at high doping levels this makes the self-consistent single-particle approach (SPARTA) a robust and efficient method for the simulation of nanoscale MOSFETs where quasi-ballistic transport is crucial for the on-current.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_3_308/_p

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@ARTICLE{e86-c_3_308,
author={Fabian M. BUFLER, Christoph ZECHNER, Andreas SCHENK, Wolfgang FICHTNER, },
journal={IEICE TRANSACTIONS on Electronics},
title={Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation},
year={2003},
volume={E86-C},
number={3},
pages={308-313},
abstract={The validity and capability of an iterative coupling scheme between single-particle frozen-field Monte Carlo simulations and nonlinear Poisson solutions for achieving self-consistency is investigated. For this purpose, a realistic 0.1 µm lightly-doped-drain (LDD) n-MOSFET with a maximum doping level of about 2.5 10²⁰ cm^-3 is simulated. It is found that taking the drift-diffusion (DD) or the hydrodynamic (HD) model as initial simulation leads to the same Monte Carlo result for the drain current. This shows that different electron densities taken either from a DD or a HD simulation in the bulk region, which is never visited by Monte Carlo electrons, have a negligible influence on the solution of the Poisson equation. For the device investigated about ten iterations are necessary to reach the stationary state after which gathering of cumulative averages can begin. Together with the absence of stability problems at high doping levels this makes the self-consistent single-particle approach (SPARTA) a robust and efficient method for the simulation of nanoscale MOSFETs where quasi-ballistic transport is crucial for the on-current.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation
T2 - IEICE TRANSACTIONS on Electronics
SP - 308
EP - 313
AU - Fabian M. BUFLER
AU - Christoph ZECHNER
AU - Andreas SCHENK
AU - Wolfgang FICHTNER
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2003
AB - The validity and capability of an iterative coupling scheme between single-particle frozen-field Monte Carlo simulations and nonlinear Poisson solutions for achieving self-consistency is investigated. For this purpose, a realistic 0.1 µm lightly-doped-drain (LDD) n-MOSFET with a maximum doping level of about 2.5 10²⁰ cm^-3 is simulated. It is found that taking the drift-diffusion (DD) or the hydrodynamic (HD) model as initial simulation leads to the same Monte Carlo result for the drain current. This shows that different electron densities taken either from a DD or a HD simulation in the bulk region, which is never visited by Monte Carlo electrons, have a negligible influence on the solution of the Poisson equation. For the device investigated about ten iterations are necessary to reach the stationary state after which gathering of cumulative averages can begin. Together with the absence of stability problems at high doping levels this makes the self-consistent single-particle approach (SPARTA) a robust and efficient method for the simulation of nanoscale MOSFETs where quasi-ballistic transport is crucial for the on-current.
ER -