A Low Quiescent Current CV/CC Parallel Operation HBT Power Amplifier for W-CDMA Terminals

Shintaro SHINJO; Kazutomi MORI; Hiro-omi UEDA; Akira OHTA; Hiroaki SEKI; Noriharu SUEMATSU; Tadashi TAKAGI

A Low Quiescent Current CV/CC Parallel Operation HBT Power Amplifier for W-CDMA Terminals

Shintaro SHINJO, Kazutomi MORI, Hiro-omi UEDA, Akira OHTA, Hiroaki SEKI, Noriharu SUEMATSU, Tadashi TAKAGI

Full Text Views

0

Share
Cite this

Summary :

A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32 mA to 23 mA with adjacent channel leakage power ratio (ACPR) < -40.0 dBc. At the maximum output power region, the fabricated PA achieves output power (P_out) of 26.8 dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0 dBc, and shows the comparable performances with a conventional PA using CV mode HBT.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.8 pp.1444-1450

Publication Date: 2003/08/01

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)

Category

Cite this

Copy

Shintaro SHINJO, Kazutomi MORI, Hiro-omi UEDA, Akira OHTA, Hiroaki SEKI, Noriharu SUEMATSU, Tadashi TAKAGI, "A Low Quiescent Current CV/CC Parallel Operation HBT Power Amplifier for W-CDMA Terminals" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 8, pp. 1444-1450, August 2003, doi: .
Abstract: A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32 mA to 23 mA with adjacent channel leakage power ratio (ACPR) < -40.0 dBc. At the maximum output power region, the fabricated PA achieves output power (P_out) of 26.8 dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0 dBc, and shows the comparable performances with a conventional PA using CV mode HBT.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_8_1444/_p

Copy

@ARTICLE{e86-c_8_1444,
author={Shintaro SHINJO, Kazutomi MORI, Hiro-omi UEDA, Akira OHTA, Hiroaki SEKI, Noriharu SUEMATSU, Tadashi TAKAGI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low Quiescent Current CV/CC Parallel Operation HBT Power Amplifier for W-CDMA Terminals},
year={2003},
volume={E86-C},
number={8},
pages={1444-1450},
abstract={A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32 mA to 23 mA with adjacent channel leakage power ratio (ACPR) < -40.0 dBc. At the maximum output power region, the fabricated PA achieves output power (P_out) of 26.8 dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0 dBc, and shows the comparable performances with a conventional PA using CV mode HBT.},
keywords={},
doi={},
ISSN={},
month={August},}

Copy

TY - JOUR
TI - A Low Quiescent Current CV/CC Parallel Operation HBT Power Amplifier for W-CDMA Terminals
T2 - IEICE TRANSACTIONS on Electronics
SP - 1444
EP - 1450
AU - Shintaro SHINJO
AU - Kazutomi MORI
AU - Hiro-omi UEDA
AU - Akira OHTA
AU - Hiroaki SEKI
AU - Noriharu SUEMATSU
AU - Tadashi TAKAGI
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2003
AB - A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32 mA to 23 mA with adjacent channel leakage power ratio (ACPR) < -40.0 dBc. At the maximum output power region, the fabricated PA achieves output power (P_out) of 26.8 dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0 dBc, and shows the comparable performances with a conventional PA using CV mode HBT.
ER -