A 270 GHz-Band Planer Type MMIC Image Rejection SIS Mixer

Morishige HIEDA; Tetsuya TAKAMI; Tadashi TAKAGI

A 270 GHz-Band Planer Type MMIC Image Rejection SIS Mixer

Morishige HIEDA, Tetsuya TAKAMI, Tadashi TAKAGI

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A 270 GHz-band image rejection SIS mixer is developed. This mixer employs planer type image rejection configuration and is integrated into a single-chip as in MMIC's at microwave frequency. In order to use sapphire substrate at 270 GHz-band, CPW transmission lines are selected to realize 50-70Ω characteristic impedances. The fabricated MMIC SIS mixer performs 12-24 dB image rejection ratio with 450-780 K noise temperature at 270 GHz.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.8 pp.1458-1463

Publication Date: 2003/08/01

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Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)

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Morishige HIEDA, Tetsuya TAKAMI, Tadashi TAKAGI, "A 270 GHz-Band Planer Type MMIC Image Rejection SIS Mixer" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 8, pp. 1458-1463, August 2003, doi: .
Abstract: A 270 GHz-band image rejection SIS mixer is developed. This mixer employs planer type image rejection configuration and is integrated into a single-chip as in MMIC's at microwave frequency. In order to use sapphire substrate at 270 GHz-band, CPW transmission lines are selected to realize 50-70Ω characteristic impedances. The fabricated MMIC SIS mixer performs 12-24 dB image rejection ratio with 450-780 K noise temperature at 270 GHz.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_8_1458/_p

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@ARTICLE{e86-c_8_1458,
author={Morishige HIEDA, Tetsuya TAKAMI, Tadashi TAKAGI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 270 GHz-Band Planer Type MMIC Image Rejection SIS Mixer},
year={2003},
volume={E86-C},
number={8},
pages={1458-1463},
abstract={A 270 GHz-band image rejection SIS mixer is developed. This mixer employs planer type image rejection configuration and is integrated into a single-chip as in MMIC's at microwave frequency. In order to use sapphire substrate at 270 GHz-band, CPW transmission lines are selected to realize 50-70Ω characteristic impedances. The fabricated MMIC SIS mixer performs 12-24 dB image rejection ratio with 450-780 K noise temperature at 270 GHz.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - A 270 GHz-Band Planer Type MMIC Image Rejection SIS Mixer
T2 - IEICE TRANSACTIONS on Electronics
SP - 1458
EP - 1463
AU - Morishige HIEDA
AU - Tetsuya TAKAMI
AU - Tadashi TAKAGI
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2003
AB - A 270 GHz-band image rejection SIS mixer is developed. This mixer employs planer type image rejection configuration and is integrated into a single-chip as in MMIC's at microwave frequency. In order to use sapphire substrate at 270 GHz-band, CPW transmission lines are selected to realize 50-70Ω characteristic impedances. The fabricated MMIC SIS mixer performs 12-24 dB image rejection ratio with 450-780 K noise temperature at 270 GHz.
ER -