High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications

Andrei GREBENNIKOV; James WONG; Hiroaki DEGUCHI

doi:10.1587/transele.2021MMI0003

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High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications

Andrei GREBENNIKOV, James WONG, Hiroaki DEGUCHI

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In this paper, the high-power high-efficiency asymmetric Doherty power amplifiers based on high-voltage GaN HEMT devices with internal input matching for base station applications are proposed and described. For a three-way 1:2 asymmetric Doherty structures, an exceptionally high output power of 1 kW with a peak efficiency of 83% and a linear flat power gain of about 15 dB was achieved in a frequency band of 2.11-2.17 GHz, whereas an output power of 59.5 dBm with a peak efficiency of 78% and linear power gain of 12 dB and an output power of 59.2 dBm with a peak efficiency of 65% and a linear power gain of 13 dB were obtained across 1.8-2.2 GHz. To provide a high-efficiency broadband operation, the concept of inverted Doherty structure is applied and described in detail. By using a high-power broadband inverted Doherty amplifier architecture with a 2×120-W GaN HEMT transistor, a saturated power of greater than 54 dBm, a linear power gain of greater than 13 dB and a drain efficiency of greater than 50% at 7-dB power backoff in a frequency bandwidth of 1.8-2.7 GHz were obtained.

Publication: IEICE TRANSACTIONS on Electronics Vol.E104-C No.10 pp.488-495

Publication Date: 2021/10/01

Publicized: 2021/02/24

Online ISSN: 1745-1353

DOI: 10.1587/transele.2021MMI0003

Type of Manuscript: Special Section INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies)

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Authors

Andrei GREBENNIKOV
  Sumitomo Electric Europe Ltd.
James WONG
  Sumitomo Electric Device Innovations Inc.
Hiroaki DEGUCHI
  Sumitomo Electric Device Innovations Inc.

Keyword

Doherty amplifier, asymmetric, inverted, broadband, GaN HEMT, efficiency

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Andrei GREBENNIKOV, James WONG, Hiroaki DEGUCHI, "High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications" in IEICE TRANSACTIONS on Electronics, vol. E104-C, no. 10, pp. 488-495, October 2021, doi: 10.1587/transele.2021MMI0003.
Abstract: In this paper, the high-power high-efficiency asymmetric Doherty power amplifiers based on high-voltage GaN HEMT devices with internal input matching for base station applications are proposed and described. For a three-way 1:2 asymmetric Doherty structures, an exceptionally high output power of 1 kW with a peak efficiency of 83% and a linear flat power gain of about 15 dB was achieved in a frequency band of 2.11-2.17 GHz, whereas an output power of 59.5 dBm with a peak efficiency of 78% and linear power gain of 12 dB and an output power of 59.2 dBm with a peak efficiency of 65% and a linear power gain of 13 dB were obtained across 1.8-2.2 GHz. To provide a high-efficiency broadband operation, the concept of inverted Doherty structure is applied and described in detail. By using a high-power broadband inverted Doherty amplifier architecture with a 2×120-W GaN HEMT transistor, a saturated power of greater than 54 dBm, a linear power gain of greater than 13 dB and a drain efficiency of greater than 50% at 7-dB power backoff in a frequency bandwidth of 1.8-2.7 GHz were obtained.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.2021MMI0003/_p

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@ARTICLE{e104-c_10_488,
author={Andrei GREBENNIKOV, James WONG, Hiroaki DEGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications},
year={2021},
volume={E104-C},
number={10},
pages={488-495},
abstract={In this paper, the high-power high-efficiency asymmetric Doherty power amplifiers based on high-voltage GaN HEMT devices with internal input matching for base station applications are proposed and described. For a three-way 1:2 asymmetric Doherty structures, an exceptionally high output power of 1 kW with a peak efficiency of 83% and a linear flat power gain of about 15 dB was achieved in a frequency band of 2.11-2.17 GHz, whereas an output power of 59.5 dBm with a peak efficiency of 78% and linear power gain of 12 dB and an output power of 59.2 dBm with a peak efficiency of 65% and a linear power gain of 13 dB were obtained across 1.8-2.2 GHz. To provide a high-efficiency broadband operation, the concept of inverted Doherty structure is applied and described in detail. By using a high-power broadband inverted Doherty amplifier architecture with a 2×120-W GaN HEMT transistor, a saturated power of greater than 54 dBm, a linear power gain of greater than 13 dB and a drain efficiency of greater than 50% at 7-dB power backoff in a frequency bandwidth of 1.8-2.7 GHz were obtained.},
keywords={},
doi={10.1587/transele.2021MMI0003},
ISSN={1745-1353},
month={October},}

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TY - JOUR
TI - High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 488
EP - 495
AU - Andrei GREBENNIKOV
AU - James WONG
AU - Hiroaki DEGUCHI
PY - 2021
DO - 10.1587/transele.2021MMI0003
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E104-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2021
AB - In this paper, the high-power high-efficiency asymmetric Doherty power amplifiers based on high-voltage GaN HEMT devices with internal input matching for base station applications are proposed and described. For a three-way 1:2 asymmetric Doherty structures, an exceptionally high output power of 1 kW with a peak efficiency of 83% and a linear flat power gain of about 15 dB was achieved in a frequency band of 2.11-2.17 GHz, whereas an output power of 59.5 dBm with a peak efficiency of 78% and linear power gain of 12 dB and an output power of 59.2 dBm with a peak efficiency of 65% and a linear power gain of 13 dB were obtained across 1.8-2.2 GHz. To provide a high-efficiency broadband operation, the concept of inverted Doherty structure is applied and described in detail. By using a high-power broadband inverted Doherty amplifier architecture with a 2×120-W GaN HEMT transistor, a saturated power of greater than 54 dBm, a linear power gain of greater than 13 dB and a drain efficiency of greater than 50% at 7-dB power backoff in a frequency bandwidth of 1.8-2.7 GHz were obtained.
ER -