Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations

Koji YAMANAKA; Shintaro SHINJO; Yuji KOMATSUZAKI; Shuichi SAKATA; Keigo NAKATANI; Yutaro YAMAGUCHI

doi:10.1587/transele.2021MMI0008

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Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations

Koji YAMANAKA, Shintaro SHINJO, Yuji KOMATSUZAKI, Shuichi SAKATA, Keigo NAKATANI, Yutaro YAMAGUCHI

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Summary :

High power amplifier technologies for base transceiver stations (BTSs) for the 5th generation (5G) mobile communication systems and so-called beyond 5G (B5G) systems are reviewed. For sub-6, which is categorized into frequency range 1 (FR1) in 5G, wideband Doherty amplifiers are introduced, and a multi-band load modulation amplifier, an envelope tracking amplifier, and a digital power amplifier for B5G are explained. For millimeter wave 5G, which is categorized into frequency range 2 (FR2), GaAs and GaN MMICs operating at around 28GHz are introduced. Finally, future prospect for THz GaN devices is described.

Publication: IEICE TRANSACTIONS on Electronics Vol.E104-C No.10 pp.526-533

Publication Date: 2021/10/01

Publicized: 2021/05/13

Online ISSN: 1745-1353

DOI: 10.1587/transele.2021MMI0008

Type of Manuscript: Special Section INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies)

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Authors

Koji YAMANAKA
  Information Technology R&D Center
Shintaro SHINJO
  Information Technology R&D Center
Yuji KOMATSUZAKI
  Information Technology R&D Center
Shuichi SAKATA
  Information Technology R&D Center
Keigo NAKATANI
  Information Technology R&D Center
Yutaro YAMAGUCHI
  Information Technology R&D Center

Keyword

5G, beyond 5G, high power amplifier, base-station, Doherty amplifier, digital power amplifier

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Koji YAMANAKA, Shintaro SHINJO, Yuji KOMATSUZAKI, Shuichi SAKATA, Keigo NAKATANI, Yutaro YAMAGUCHI, "Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations" in IEICE TRANSACTIONS on Electronics, vol. E104-C, no. 10, pp. 526-533, October 2021, doi: 10.1587/transele.2021MMI0008.
Abstract: High power amplifier technologies for base transceiver stations (BTSs) for the 5th generation (5G) mobile communication systems and so-called beyond 5G (B5G) systems are reviewed. For sub-6, which is categorized into frequency range 1 (FR1) in 5G, wideband Doherty amplifiers are introduced, and a multi-band load modulation amplifier, an envelope tracking amplifier, and a digital power amplifier for B5G are explained. For millimeter wave 5G, which is categorized into frequency range 2 (FR2), GaAs and GaN MMICs operating at around 28GHz are introduced. Finally, future prospect for THz GaN devices is described.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.2021MMI0008/_p

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@ARTICLE{e104-c_10_526,
author={Koji YAMANAKA, Shintaro SHINJO, Yuji KOMATSUZAKI, Shuichi SAKATA, Keigo NAKATANI, Yutaro YAMAGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations},
year={2021},
volume={E104-C},
number={10},
pages={526-533},
abstract={High power amplifier technologies for base transceiver stations (BTSs) for the 5th generation (5G) mobile communication systems and so-called beyond 5G (B5G) systems are reviewed. For sub-6, which is categorized into frequency range 1 (FR1) in 5G, wideband Doherty amplifiers are introduced, and a multi-band load modulation amplifier, an envelope tracking amplifier, and a digital power amplifier for B5G are explained. For millimeter wave 5G, which is categorized into frequency range 2 (FR2), GaAs and GaN MMICs operating at around 28GHz are introduced. Finally, future prospect for THz GaN devices is described.},
keywords={},
doi={10.1587/transele.2021MMI0008},
ISSN={1745-1353},
month={October},}

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TY - JOUR
TI - Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations
T2 - IEICE TRANSACTIONS on Electronics
SP - 526
EP - 533
AU - Koji YAMANAKA
AU - Shintaro SHINJO
AU - Yuji KOMATSUZAKI
AU - Shuichi SAKATA
AU - Keigo NAKATANI
AU - Yutaro YAMAGUCHI
PY - 2021
DO - 10.1587/transele.2021MMI0008
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E104-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2021
AB - High power amplifier technologies for base transceiver stations (BTSs) for the 5th generation (5G) mobile communication systems and so-called beyond 5G (B5G) systems are reviewed. For sub-6, which is categorized into frequency range 1 (FR1) in 5G, wideband Doherty amplifiers are introduced, and a multi-band load modulation amplifier, an envelope tracking amplifier, and a digital power amplifier for B5G are explained. For millimeter wave 5G, which is categorized into frequency range 2 (FR2), GaAs and GaN MMICs operating at around 28GHz are introduced. Finally, future prospect for THz GaN devices is described.
ER -