Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications

Takeshi MIZOGUCHI; Toshiyuki NAKA; Yuta TANIMOTO; Yasuhiro OKADA; Wataru SAITO; Mitiko MIURA-MATTAUSCH; Hans Jürgen MATTAUSCH

doi:10.1587/transele.E100.C.321

Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications

Takeshi MIZOGUCHI, Toshiyuki NAKA, Yuta TANIMOTO, Yasuhiro OKADA, Wataru SAITO, Mitiko MIURA-MATTAUSCH, Hans Jürgen MATTAUSCH

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The major task in compact modeling for high power devices is to predict the switching waveform accurately because it determines the energy loss of circuits. Device capacitance mainly determines the switching characteristics, which makes accurate capacitance modeling inevitable. This paper presents a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for Gallium-Nitride-based High Electron Mobility Transistors (GaN-HEMTs)], where the focus is given on the accurate modeling of the field-plate (FP), which is introduced to delocalize the electric-field peak that occurs at the electrode edge. We demonstrate that the proposed model reproduces capacitance measurements of a GaN-HEMT accurately without fitting parameters. Furthermore, the influence of the field plate on the studied circuit performance is analyzed.

Publication: IEICE TRANSACTIONS on Electronics Vol.E100-C No.3 pp.321-328

Publication Date: 2017/03/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E100.C.321

Type of Manuscript: PAPER

Category: Semiconductor Materials and Devices

Authors

Takeshi MIZOGUCHI
  Toshiba Corporation,Hiroshima University
Toshiyuki NAKA
  Toshiba Corporation
Yuta TANIMOTO
  Hiroshima University
Yasuhiro OKADA
  Hiroshima University
Wataru SAITO
  Toshiba Corporation
Mitiko MIURA-MATTAUSCH
  Hiroshima University
Hans Jürgen MATTAUSCH
  Hiroshima University

Keyword

power, GaN-HEMTs, HiSIM, field plate, capacitance

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Takeshi MIZOGUCHI, Toshiyuki NAKA, Yuta TANIMOTO, Yasuhiro OKADA, Wataru SAITO, Mitiko MIURA-MATTAUSCH, Hans Jürgen MATTAUSCH, "Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications" in IEICE TRANSACTIONS on Electronics, vol. E100-C, no. 3, pp. 321-328, March 2017, doi: 10.1587/transele.E100.C.321.
Abstract: The major task in compact modeling for high power devices is to predict the switching waveform accurately because it determines the energy loss of circuits. Device capacitance mainly determines the switching characteristics, which makes accurate capacitance modeling inevitable. This paper presents a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for Gallium-Nitride-based High Electron Mobility Transistors (GaN-HEMTs)], where the focus is given on the accurate modeling of the field-plate (FP), which is introduced to delocalize the electric-field peak that occurs at the electrode edge. We demonstrate that the proposed model reproduces capacitance measurements of a GaN-HEMT accurately without fitting parameters. Furthermore, the influence of the field plate on the studied circuit performance is analyzed.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.321/_p

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@ARTICLE{e100-c_3_321,
author={Takeshi MIZOGUCHI, Toshiyuki NAKA, Yuta TANIMOTO, Yasuhiro OKADA, Wataru SAITO, Mitiko MIURA-MATTAUSCH, Hans Jürgen MATTAUSCH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications},
year={2017},
volume={E100-C},
number={3},
pages={321-328},
abstract={The major task in compact modeling for high power devices is to predict the switching waveform accurately because it determines the energy loss of circuits. Device capacitance mainly determines the switching characteristics, which makes accurate capacitance modeling inevitable. This paper presents a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for Gallium-Nitride-based High Electron Mobility Transistors (GaN-HEMTs)], where the focus is given on the accurate modeling of the field-plate (FP), which is introduced to delocalize the electric-field peak that occurs at the electrode edge. We demonstrate that the proposed model reproduces capacitance measurements of a GaN-HEMT accurately without fitting parameters. Furthermore, the influence of the field plate on the studied circuit performance is analyzed.},
keywords={},
doi={10.1587/transele.E100.C.321},
ISSN={1745-1353},
month={March},}

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TY - JOUR
TI - Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 321
EP - 328
AU - Takeshi MIZOGUCHI
AU - Toshiyuki NAKA
AU - Yuta TANIMOTO
AU - Yasuhiro OKADA
AU - Wataru SAITO
AU - Mitiko MIURA-MATTAUSCH
AU - Hans Jürgen MATTAUSCH
PY - 2017
DO - 10.1587/transele.E100.C.321
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2017
AB - The major task in compact modeling for high power devices is to predict the switching waveform accurately because it determines the energy loss of circuits. Device capacitance mainly determines the switching characteristics, which makes accurate capacitance modeling inevitable. This paper presents a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for Gallium-Nitride-based High Electron Mobility Transistors (GaN-HEMTs)], where the focus is given on the accurate modeling of the field-plate (FP), which is introduced to delocalize the electric-field peak that occurs at the electrode edge. We demonstrate that the proposed model reproduces capacitance measurements of a GaN-HEMT accurately without fitting parameters. Furthermore, the influence of the field plate on the studied circuit performance is analyzed.
ER -