A 250 MHz to 8 GHz GaAs pHEMT IQ Modulator

Kiyoyuki IHARA

doi:10.1587/transele.E96.C.245

A 250 MHz to 8 GHz GaAs pHEMT IQ Modulator

Kiyoyuki IHARA

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The author developed a wideband precise I/Q modulator using GaAs pHEMT technology. In this technology, pHEMT has 0.22 µm metallurgical gate length and f_t=51 GHz at V_ds=5V. With the careful design of the wideband phase shifter, this IQ modulator achieved a large wideband frequency range of 250 MHz to 8 GHz and good EVM performance after calibration. For overall frequency range, low distortion performance is obtained, where third order intermodulation is less than -42 dBc. Also the ACPR at 2.2 GHz for W-CDMA application is less than -74 dBc.

Publication: IEICE TRANSACTIONS on Electronics Vol.E96-C No.2 pp.245-250

Publication Date: 2013/02/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E96.C.245

Type of Manuscript: PAPER

Category: Microwaves, Millimeter-Waves

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Kiyoyuki IHARA, "A 250 MHz to 8 GHz GaAs pHEMT IQ Modulator" in IEICE TRANSACTIONS on Electronics, vol. E96-C, no. 2, pp. 245-250, February 2013, doi: 10.1587/transele.E96.C.245.
Abstract: The author developed a wideband precise I/Q modulator using GaAs pHEMT technology. In this technology, pHEMT has 0.22 µm metallurgical gate length and f_t=51 GHz at V_ds=5V. With the careful design of the wideband phase shifter, this IQ modulator achieved a large wideband frequency range of 250 MHz to 8 GHz and good EVM performance after calibration. For overall frequency range, low distortion performance is obtained, where third order intermodulation is less than -42 dBc. Also the ACPR at 2.2 GHz for W-CDMA application is less than -74 dBc.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.245/_p

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@ARTICLE{e96-c_2_245,
author={Kiyoyuki IHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 250 MHz to 8 GHz GaAs pHEMT IQ Modulator},
year={2013},
volume={E96-C},
number={2},
pages={245-250},
abstract={The author developed a wideband precise I/Q modulator using GaAs pHEMT technology. In this technology, pHEMT has 0.22 µm metallurgical gate length and f_t=51 GHz at V_ds=5V. With the careful design of the wideband phase shifter, this IQ modulator achieved a large wideband frequency range of 250 MHz to 8 GHz and good EVM performance after calibration. For overall frequency range, low distortion performance is obtained, where third order intermodulation is less than -42 dBc. Also the ACPR at 2.2 GHz for W-CDMA application is less than -74 dBc.},
keywords={},
doi={10.1587/transele.E96.C.245},
ISSN={1745-1353},
month={February},}

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TY - JOUR
TI - A 250 MHz to 8 GHz GaAs pHEMT IQ Modulator
T2 - IEICE TRANSACTIONS on Electronics
SP - 245
EP - 250
AU - Kiyoyuki IHARA
PY - 2013
DO - 10.1587/transele.E96.C.245
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2013
AB - The author developed a wideband precise I/Q modulator using GaAs pHEMT technology. In this technology, pHEMT has 0.22 µm metallurgical gate length and f_t=51 GHz at V_ds=5V. With the careful design of the wideband phase shifter, this IQ modulator achieved a large wideband frequency range of 250 MHz to 8 GHz and good EVM performance after calibration. For overall frequency range, low distortion performance is obtained, where third order intermodulation is less than -42 dBc. Also the ACPR at 2.2 GHz for W-CDMA application is less than -74 dBc.
ER -