Self-Cascode MOSFET with a Self-Biased Body Effect for Ultra-Low-Power Voltage Reference Generator

Hao ZHANG; Mengshu HUANG; Yimeng ZHANG; Tsutomu YOSHIHARA

doi:10.1587/transele.E96.C.859

Self-Cascode MOSFET with a Self-Biased Body Effect for Ultra-Low-Power Voltage Reference Generator

Hao ZHANG, Mengshu HUANG, Yimeng ZHANG, Tsutomu YOSHIHARA

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This paper proposes a novel approach for implementing an ultra-low-power voltage reference using the structure of self-cascode MOSFET, operating in the subthreshold region with a self-biased body effect. The difference between the two gate-source voltages in the structure enables the voltage reference circuit to produce a low output voltage below the threshold voltage. The circuit is designed with only MOSFETs and fabricated in standard 0.18-µm CMOS technology. Measurements show that the reference voltage is about 107.5 mV, and the temperature coefficient is about 40 ppm/, at a range from -20 to 80. The voltage line sensitivity is 0.017%/V. The minimum supply voltage is 0.85 V, and the supply current is approximately 24 nA at 80. The occupied chip area is around 0.028 mm².

Publication: IEICE TRANSACTIONS on Electronics Vol.E96-C No.6 pp.859-866

Publication Date: 2013/06/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E96.C.859

Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)

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Authors

Hao ZHANG
  Waseda University
Mengshu HUANG
  Waseda University
Yimeng ZHANG
  Waseda University
Tsutomu YOSHIHARA
  Waseda University

Keyword

voltage reference, subthreshold, self-cascode, body effect, ultra-low power, low output

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Hao ZHANG, Mengshu HUANG, Yimeng ZHANG, Tsutomu YOSHIHARA, "Self-Cascode MOSFET with a Self-Biased Body Effect for Ultra-Low-Power Voltage Reference Generator" in IEICE TRANSACTIONS on Electronics, vol. E96-C, no. 6, pp. 859-866, June 2013, doi: 10.1587/transele.E96.C.859.
Abstract: This paper proposes a novel approach for implementing an ultra-low-power voltage reference using the structure of self-cascode MOSFET, operating in the subthreshold region with a self-biased body effect. The difference between the two gate-source voltages in the structure enables the voltage reference circuit to produce a low output voltage below the threshold voltage. The circuit is designed with only MOSFETs and fabricated in standard 0.18-µm CMOS technology. Measurements show that the reference voltage is about 107.5 mV, and the temperature coefficient is about 40 ppm/, at a range from -20 to 80. The voltage line sensitivity is 0.017%/V. The minimum supply voltage is 0.85 V, and the supply current is approximately 24 nA at 80. The occupied chip area is around 0.028 mm².
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.859/_p

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@ARTICLE{e96-c_6_859,
author={Hao ZHANG, Mengshu HUANG, Yimeng ZHANG, Tsutomu YOSHIHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Self-Cascode MOSFET with a Self-Biased Body Effect for Ultra-Low-Power Voltage Reference Generator},
year={2013},
volume={E96-C},
number={6},
pages={859-866},
abstract={This paper proposes a novel approach for implementing an ultra-low-power voltage reference using the structure of self-cascode MOSFET, operating in the subthreshold region with a self-biased body effect. The difference between the two gate-source voltages in the structure enables the voltage reference circuit to produce a low output voltage below the threshold voltage. The circuit is designed with only MOSFETs and fabricated in standard 0.18-µm CMOS technology. Measurements show that the reference voltage is about 107.5 mV, and the temperature coefficient is about 40 ppm/, at a range from -20 to 80. The voltage line sensitivity is 0.017%/V. The minimum supply voltage is 0.85 V, and the supply current is approximately 24 nA at 80. The occupied chip area is around 0.028 mm².},
keywords={},
doi={10.1587/transele.E96.C.859},
ISSN={1745-1353},
month={June},}

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TY - JOUR
TI - Self-Cascode MOSFET with a Self-Biased Body Effect for Ultra-Low-Power Voltage Reference Generator
T2 - IEICE TRANSACTIONS on Electronics
SP - 859
EP - 866
AU - Hao ZHANG
AU - Mengshu HUANG
AU - Yimeng ZHANG
AU - Tsutomu YOSHIHARA
PY - 2013
DO - 10.1587/transele.E96.C.859
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2013
AB - This paper proposes a novel approach for implementing an ultra-low-power voltage reference using the structure of self-cascode MOSFET, operating in the subthreshold region with a self-biased body effect. The difference between the two gate-source voltages in the structure enables the voltage reference circuit to produce a low output voltage below the threshold voltage. The circuit is designed with only MOSFETs and fabricated in standard 0.18-µm CMOS technology. Measurements show that the reference voltage is about 107.5 mV, and the temperature coefficient is about 40 ppm/, at a range from -20 to 80. The voltage line sensitivity is 0.017%/V. The minimum supply voltage is 0.85 V, and the supply current is approximately 24 nA at 80. The occupied chip area is around 0.028 mm².
ER -