Experimental Investigation on RF Characteristics of Cryogenically-Cooled 3W-Class Receiver Amplifier Employing GaN HEMT with Blue Light LED for Mobile Base Stations

Yasunori SUZUKI; Shoichi NARAHASHI; Toshio NOJIMA

doi:10.1587/transele.E97.C.930

Experimental Investigation on RF Characteristics of Cryogenically-Cooled 3W-Class Receiver Amplifier Employing GaN HEMT with Blue Light LED for Mobile Base Stations

Yasunori SUZUKI, Shoichi NARAHASHI, Toshio NOJIMA

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This paper presents an experimental investigation on the RF characteristics of a 3W-class cryogenically-cooled receiver amplifier employing a gallium-nitride high electron mobility transistor (GaN HEMT) with a blue light for mobile base stations. In general, a cryogenically-cooled receiver amplifier using a GaN HEMT exhibits unstable DC characteristics similar to those found in the current collapse phenomenon because the GaN HEMT loses thermal energy at cryogenic temperatures. The fabricated cryogenically-cooled receiver amplifier achieves stable DC characteristics by injecting blue light into the GaN HEMT instead of thermal energy. Experimental results show that the amplifier achieves fine stable DC characteristics for deviation in the drain-source current from 42% to 5% and RF characteristics for a maximum power added efficiency from 58% to 68% without and with the blue light at 60 K. The fabricated amplifier is effective in reducing the power consumption at cryogenic temperatures. To the best of our knowledge, this paper is the first report regarding RF characteristics of a cryogenically-cooled receiver amplifier using a blue light for mobile base stations.

Publication: IEICE TRANSACTIONS on Electronics Vol.E97-C No.10 pp.930-937

Publication Date: 2014/10/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E97.C.930

Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies)

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Authors

Yasunori SUZUKI
  NTT DOCOMO, INC.
Shoichi NARAHASHI
  NTT DOCOMO, INC.
Toshio NOJIMA
  Hokkaido University

Keyword

cryogenically-cooled amplifier, GaN HEMT, blue light, DC, RF, light-emitting diode, mobile base station, receiver amplifier

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Yasunori SUZUKI, Shoichi NARAHASHI, Toshio NOJIMA, "Experimental Investigation on RF Characteristics of Cryogenically-Cooled 3W-Class Receiver Amplifier Employing GaN HEMT with Blue Light LED for Mobile Base Stations" in IEICE TRANSACTIONS on Electronics, vol. E97-C, no. 10, pp. 930-937, October 2014, doi: 10.1587/transele.E97.C.930.
Abstract: This paper presents an experimental investigation on the RF characteristics of a 3W-class cryogenically-cooled receiver amplifier employing a gallium-nitride high electron mobility transistor (GaN HEMT) with a blue light for mobile base stations. In general, a cryogenically-cooled receiver amplifier using a GaN HEMT exhibits unstable DC characteristics similar to those found in the current collapse phenomenon because the GaN HEMT loses thermal energy at cryogenic temperatures. The fabricated cryogenically-cooled receiver amplifier achieves stable DC characteristics by injecting blue light into the GaN HEMT instead of thermal energy. Experimental results show that the amplifier achieves fine stable DC characteristics for deviation in the drain-source current from 42% to 5% and RF characteristics for a maximum power added efficiency from 58% to 68% without and with the blue light at 60 K. The fabricated amplifier is effective in reducing the power consumption at cryogenic temperatures. To the best of our knowledge, this paper is the first report regarding RF characteristics of a cryogenically-cooled receiver amplifier using a blue light for mobile base stations.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.930/_p

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@ARTICLE{e97-c_10_930,
author={Yasunori SUZUKI, Shoichi NARAHASHI, Toshio NOJIMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Experimental Investigation on RF Characteristics of Cryogenically-Cooled 3W-Class Receiver Amplifier Employing GaN HEMT with Blue Light LED for Mobile Base Stations},
year={2014},
volume={E97-C},
number={10},
pages={930-937},
abstract={This paper presents an experimental investigation on the RF characteristics of a 3W-class cryogenically-cooled receiver amplifier employing a gallium-nitride high electron mobility transistor (GaN HEMT) with a blue light for mobile base stations. In general, a cryogenically-cooled receiver amplifier using a GaN HEMT exhibits unstable DC characteristics similar to those found in the current collapse phenomenon because the GaN HEMT loses thermal energy at cryogenic temperatures. The fabricated cryogenically-cooled receiver amplifier achieves stable DC characteristics by injecting blue light into the GaN HEMT instead of thermal energy. Experimental results show that the amplifier achieves fine stable DC characteristics for deviation in the drain-source current from 42% to 5% and RF characteristics for a maximum power added efficiency from 58% to 68% without and with the blue light at 60 K. The fabricated amplifier is effective in reducing the power consumption at cryogenic temperatures. To the best of our knowledge, this paper is the first report regarding RF characteristics of a cryogenically-cooled receiver amplifier using a blue light for mobile base stations.},
keywords={},
doi={10.1587/transele.E97.C.930},
ISSN={1745-1353},
month={October},}

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TY - JOUR
TI - Experimental Investigation on RF Characteristics of Cryogenically-Cooled 3W-Class Receiver Amplifier Employing GaN HEMT with Blue Light LED for Mobile Base Stations
T2 - IEICE TRANSACTIONS on Electronics
SP - 930
EP - 937
AU - Yasunori SUZUKI
AU - Shoichi NARAHASHI
AU - Toshio NOJIMA
PY - 2014
DO - 10.1587/transele.E97.C.930
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2014
AB - This paper presents an experimental investigation on the RF characteristics of a 3W-class cryogenically-cooled receiver amplifier employing a gallium-nitride high electron mobility transistor (GaN HEMT) with a blue light for mobile base stations. In general, a cryogenically-cooled receiver amplifier using a GaN HEMT exhibits unstable DC characteristics similar to those found in the current collapse phenomenon because the GaN HEMT loses thermal energy at cryogenic temperatures. The fabricated cryogenically-cooled receiver amplifier achieves stable DC characteristics by injecting blue light into the GaN HEMT instead of thermal energy. Experimental results show that the amplifier achieves fine stable DC characteristics for deviation in the drain-source current from 42% to 5% and RF characteristics for a maximum power added efficiency from 58% to 68% without and with the blue light at 60 K. The fabricated amplifier is effective in reducing the power consumption at cryogenic temperatures. To the best of our knowledge, this paper is the first report regarding RF characteristics of a cryogenically-cooled receiver amplifier using a blue light for mobile base stations.
ER -