Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis

Shoichi SHIBA; Masaru SATO; Hiroshi MATSUMURA; Yoichi KAWANO; Tsuyoshi TAKAHASHI; Toshihide SUZUKI; Yasuhiro NAKASHA; Taisuke IWAI; Naoki HARA

doi:10.1587/transele.E98.C.1112

Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis

Shoichi SHIBA, Masaru SATO, Hiroshi MATSUMURA, Yoichi KAWANO, Tsuyoshi TAKAHASHI, Toshihide SUZUKI, Yasuhiro NAKASHA, Taisuke IWAI, Naoki HARA

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A wide-bandwidth fundamental mixer operating at a frequency above 110GHz for precise spectrum analysis was developed using the InP HEMT technology. A single-ended resistive mixer was adopted for the mixer circuit. An IF amplifier and LO buffer amplifier were also developed and integrated into the mixer chip. As for packaging into a metal block module, a flip-chip bonding technique was introduced. Compared to face-up mounting with wire connections, flip-chip bonding exhibited good frequency flatness in signal loss. The mixer module with a built-in IF amplifier achieved a conversion gain of 5dB at an RF frequency of 135GHz and a 3-dB bandwidth of 35GHz. The mixer module with an LO buffer amplifier operated well even at an LO power of -20dBm.

Publication: IEICE TRANSACTIONS on Electronics Vol.E98-C No.12 pp.1112-1119

Publication Date: 2015/12/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E98.C.1112

Type of Manuscript: Special Section PAPER (Special Section on Terahertz Waves Coming to the Real World)

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Authors

Shoichi SHIBA
  Fujitsu Limited,Fujitsu Laboratories Ltd.
Masaru SATO
  Fujitsu Limited,Fujitsu Laboratories Ltd.
Hiroshi MATSUMURA
  Fujitsu Limited,Fujitsu Laboratories Ltd.
Yoichi KAWANO
  Fujitsu Limited,Fujitsu Laboratories Ltd.
Tsuyoshi TAKAHASHI
  Fujitsu Limited,Fujitsu Laboratories Ltd.
Toshihide SUZUKI
  Fujitsu Limited,Fujitsu Laboratories Ltd.
Yasuhiro NAKASHA
  Fujitsu Limited,Fujitsu Laboratories Ltd.
Taisuke IWAI
  Fujitsu Limited
Naoki HARA
  Fujitsu Limited,Fujitsu Laboratories Ltd.

Keyword

millimeter-wave, InP HEMTs, fundamental mixer, flip chip, waveguide module, spectrum analysis

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Shoichi SHIBA, Masaru SATO, Hiroshi MATSUMURA, Yoichi KAWANO, Tsuyoshi TAKAHASHI, Toshihide SUZUKI, Yasuhiro NAKASHA, Taisuke IWAI, Naoki HARA, "Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis" in IEICE TRANSACTIONS on Electronics, vol. E98-C, no. 12, pp. 1112-1119, December 2015, doi: 10.1587/transele.E98.C.1112.
Abstract: A wide-bandwidth fundamental mixer operating at a frequency above 110GHz for precise spectrum analysis was developed using the InP HEMT technology. A single-ended resistive mixer was adopted for the mixer circuit. An IF amplifier and LO buffer amplifier were also developed and integrated into the mixer chip. As for packaging into a metal block module, a flip-chip bonding technique was introduced. Compared to face-up mounting with wire connections, flip-chip bonding exhibited good frequency flatness in signal loss. The mixer module with a built-in IF amplifier achieved a conversion gain of 5dB at an RF frequency of 135GHz and a 3-dB bandwidth of 35GHz. The mixer module with an LO buffer amplifier operated well even at an LO power of -20dBm.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E98.C.1112/_p

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@ARTICLE{e98-c_12_1112,
author={Shoichi SHIBA, Masaru SATO, Hiroshi MATSUMURA, Yoichi KAWANO, Tsuyoshi TAKAHASHI, Toshihide SUZUKI, Yasuhiro NAKASHA, Taisuke IWAI, Naoki HARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis},
year={2015},
volume={E98-C},
number={12},
pages={1112-1119},
abstract={A wide-bandwidth fundamental mixer operating at a frequency above 110GHz for precise spectrum analysis was developed using the InP HEMT technology. A single-ended resistive mixer was adopted for the mixer circuit. An IF amplifier and LO buffer amplifier were also developed and integrated into the mixer chip. As for packaging into a metal block module, a flip-chip bonding technique was introduced. Compared to face-up mounting with wire connections, flip-chip bonding exhibited good frequency flatness in signal loss. The mixer module with a built-in IF amplifier achieved a conversion gain of 5dB at an RF frequency of 135GHz and a 3-dB bandwidth of 35GHz. The mixer module with an LO buffer amplifier operated well even at an LO power of -20dBm.},
keywords={},
doi={10.1587/transele.E98.C.1112},
ISSN={1745-1353},
month={December},}

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TY - JOUR
TI - Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis
T2 - IEICE TRANSACTIONS on Electronics
SP - 1112
EP - 1119
AU - Shoichi SHIBA
AU - Masaru SATO
AU - Hiroshi MATSUMURA
AU - Yoichi KAWANO
AU - Tsuyoshi TAKAHASHI
AU - Toshihide SUZUKI
AU - Yasuhiro NAKASHA
AU - Taisuke IWAI
AU - Naoki HARA
PY - 2015
DO - 10.1587/transele.E98.C.1112
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E98-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2015
AB - A wide-bandwidth fundamental mixer operating at a frequency above 110GHz for precise spectrum analysis was developed using the InP HEMT technology. A single-ended resistive mixer was adopted for the mixer circuit. An IF amplifier and LO buffer amplifier were also developed and integrated into the mixer chip. As for packaging into a metal block module, a flip-chip bonding technique was introduced. Compared to face-up mounting with wire connections, flip-chip bonding exhibited good frequency flatness in signal loss. The mixer module with a built-in IF amplifier achieved a conversion gain of 5dB at an RF frequency of 135GHz and a 3-dB bandwidth of 35GHz. The mixer module with an LO buffer amplifier operated well even at an LO power of -20dBm.
ER -