A Low-Power Sub-1-V Low-Voltage Reference Using Body Effect

Jun PAN; Yasuaki INOUE; Zheng LIANG; Zhangcai HUANG; Weilun HUANG

doi:10.1093/ietfec/e90-a.4.748

A Low-Power Sub-1-V Low-Voltage Reference Using Body Effect

Jun PAN, Yasuaki INOUE, Zheng LIANG, Zhangcai HUANG, Weilun HUANG

Full Text Views

0

Share
Cite this

Summary :

A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 µW, respectively. The temperature coefficient of the reference voltage is 33 ppm/ at temperatures from -40 to 100. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 µm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd=0.95-3.3 V).

Publication: IEICE TRANSACTIONS on Fundamentals Vol.E90-A No.4 pp.748-755

Publication Date: 2007/04/01

Publicized

Online ISSN: 1745-1337

DOI: 10.1093/ietfec/e90-a.4.748

Type of Manuscript: Special Section PAPER (Special Section on Selected Papers from the 19th Workshop on Circuits and Systems in Karuizawa)

Category

Cite this

Copy

Jun PAN, Yasuaki INOUE, Zheng LIANG, Zhangcai HUANG, Weilun HUANG, "A Low-Power Sub-1-V Low-Voltage Reference Using Body Effect" in IEICE TRANSACTIONS on Fundamentals, vol. E90-A, no. 4, pp. 748-755, April 2007, doi: 10.1093/ietfec/e90-a.4.748.
Abstract: A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 µW, respectively. The temperature coefficient of the reference voltage is 33 ppm/ at temperatures from -40 to 100. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 µm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd=0.95-3.3 V).
URL: https://globals.ieice.org/en_transactions/fundamentals/10.1093/ietfec/e90-a.4.748/_p

Copy

@ARTICLE{e90-a_4_748,
author={Jun PAN, Yasuaki INOUE, Zheng LIANG, Zhangcai HUANG, Weilun HUANG, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A Low-Power Sub-1-V Low-Voltage Reference Using Body Effect},
year={2007},
volume={E90-A},
number={4},
pages={748-755},
abstract={A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 µW, respectively. The temperature coefficient of the reference voltage is 33 ppm/ at temperatures from -40 to 100. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 µm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd=0.95-3.3 V).},
keywords={},
doi={10.1093/ietfec/e90-a.4.748},
ISSN={1745-1337},
month={April},}

Copy

TY - JOUR
TI - A Low-Power Sub-1-V Low-Voltage Reference Using Body Effect
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 748
EP - 755
AU - Jun PAN
AU - Yasuaki INOUE
AU - Zheng LIANG
AU - Zhangcai HUANG
AU - Weilun HUANG
PY - 2007
DO - 10.1093/ietfec/e90-a.4.748
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E90-A
IS - 4
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - April 2007
AB - A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 µW, respectively. The temperature coefficient of the reference voltage is 33 ppm/ at temperatures from -40 to 100. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 µm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd=0.95-3.3 V).
ER -