An Electrical Characteristics-Based Piecewise-Linear DC Model of the MOSFET

Yong S. KWON; Young H. KIM

An Electrical Characteristics-Based Piecewise-Linear DC Model of the MOSFET

Yong S. KWON, Young H. KIM

Full Text Views

1

Share
Cite this

Summary :

This paper presents a new piecewise-linear dc model of the MOSFET. The proposed model is derived for long channel MOSFETs from the Shichman-Hodges equations, with emphasis on the accurate modeling of the major electrical characteristics, and is extended for short channel MOSFETs. The performance of the model is evaluated by comparing current-voltage characteristics and voltage transfer characteristics with those of the SPICE level-l and Sakurai models. The experimental results, using three or fewer piecewise-linear region boundaries on the axes of V_GS, V_GD and V_SB, demonstrate that the proposed model provides enough accuracy for practical use with digital circuits.

Publication: IEICE TRANSACTIONS on Fundamentals Vol.E78-A No.5 pp.632-640

Publication Date: 1995/05/25

Publicized

Online ISSN

DOI

Type of Manuscript: PAPER

Category: VLSI Design Technology and CAD

Cite this

Copy

Yong S. KWON, Young H. KIM, "An Electrical Characteristics-Based Piecewise-Linear DC Model of the MOSFET" in IEICE TRANSACTIONS on Fundamentals, vol. E78-A, no. 5, pp. 632-640, May 1995, doi: .
Abstract: This paper presents a new piecewise-linear dc model of the MOSFET. The proposed model is derived for long channel MOSFETs from the Shichman-Hodges equations, with emphasis on the accurate modeling of the major electrical characteristics, and is extended for short channel MOSFETs. The performance of the model is evaluated by comparing current-voltage characteristics and voltage transfer characteristics with those of the SPICE level-l and Sakurai models. The experimental results, using three or fewer piecewise-linear region boundaries on the axes of V_GS, V_GD and V_SB, demonstrate that the proposed model provides enough accuracy for practical use with digital circuits.
URL: https://globals.ieice.org/en_transactions/fundamentals/10.1587/e78-a_5_632/_p

Copy

@ARTICLE{e78-a_5_632,
author={Yong S. KWON, Young H. KIM, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={An Electrical Characteristics-Based Piecewise-Linear DC Model of the MOSFET},
year={1995},
volume={E78-A},
number={5},
pages={632-640},
abstract={This paper presents a new piecewise-linear dc model of the MOSFET. The proposed model is derived for long channel MOSFETs from the Shichman-Hodges equations, with emphasis on the accurate modeling of the major electrical characteristics, and is extended for short channel MOSFETs. The performance of the model is evaluated by comparing current-voltage characteristics and voltage transfer characteristics with those of the SPICE level-l and Sakurai models. The experimental results, using three or fewer piecewise-linear region boundaries on the axes of V_GS, V_GD and V_SB, demonstrate that the proposed model provides enough accuracy for practical use with digital circuits.},
keywords={},
doi={},
ISSN={},
month={May},}

Copy

TY - JOUR
TI - An Electrical Characteristics-Based Piecewise-Linear DC Model of the MOSFET
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 632
EP - 640
AU - Yong S. KWON
AU - Young H. KIM
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E78-A
IS - 5
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - May 1995
AB - This paper presents a new piecewise-linear dc model of the MOSFET. The proposed model is derived for long channel MOSFETs from the Shichman-Hodges equations, with emphasis on the accurate modeling of the major electrical characteristics, and is extended for short channel MOSFETs. The performance of the model is evaluated by comparing current-voltage characteristics and voltage transfer characteristics with those of the SPICE level-l and Sakurai models. The experimental results, using three or fewer piecewise-linear region boundaries on the axes of V_GS, V_GD and V_SB, demonstrate that the proposed model provides enough accuracy for practical use with digital circuits.
ER -