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Narumi SAKASHITA Hisako SAWAI Eiichi TERAOKA Toshiki FUJIYAMA Tohru KENGAKU Yukihiko SHIMAZU Akiharu TADA Takeshi TOKUDA
A built-in self-test (BIST) based on a signature-analysis (one of the data compression techniques) has been implemented in a 24 bit floating point digital signal processor (DSP). By using only a single pair of linear feedback shift registers (LFSR's) and 253 words of instruction of the DSP, 95% of the functional blocks are self-tested. The number of test patterns is 35 million. It takes only 2.6 seconds for the test at fc26.7 MHz. The overhead of the BIST hardware is about 2.0% of the die size. By comparing the pass rate in a conventional function test to the BIST, nearly the same fault coverage is obtained. This result shows that the BIST is effective for VLSI processors, such as DSPs. By improving this method, manufacturing go/no-go tests without expensive test equipment will be possible.
Minoru NODA Hiroshi MATSUOKA Norio HIGASHISAKA Masaaki SHIMADA Hiroshi MAKINO Shuichi MATSUE Yasuo MITSUI Kazuo NISHITANI Akiharu TADA
Air-bridge metal interconnection technology is used for upper level power supply line interconnections in GaAs LSI's to reduce the signal propagation delay time. This technology reduces both parasitic capacitance between the signal line and the power supply line, and propagation delay in the signal line to about 10% and about 50%, respectively, compared to conventional 3-level interconnections without air-bridges. Under standard load conditions (FI=FO=2, length of load line=2 mm), the air-bridge technique leads to gate propagation delays which are about 60% of those in conventional interconnections. We fabricated 2.1-k gate Gate Arrays and 4-kb SRAM's using the air-bridge structure to interconnect power supply lines. For a Gate Array with 0.7 µm gate Buried P-layer Lightly Doped Drain (BPLDD) FET's, the typical gate propagation delay under standard load conditions was about 110 ps with a dissipation power of 1.4 mW/gate. SRAM's with 05 µm gate BPLDD's had typical access time (tacc) of 1.5 ns with a dissipation power of 700 mW/chip.