Direct parameter extraction is believed to be the most accurate method for equivalent-circuits modeling of heterojunction bipolar transistors (HBT's). Using this method, the parasitic elements, followed by the intrinsic elements, are determined analytically. Therefore, the quality of the extrinsic elements extraction plays an important role in the accuracy and robustness of the entire extraction algorithm. This study proposes a novel extraction method for the extrinsic elements, which have been proven to be strongly correlated with the intrinsic elements. By utilizing the specific correlation, the equivalent circuit modeling is reduced to an optimization problem of determining six specific extrinsic elements. Converting the intrinsic equivalent circuit into its common-collector configuration, all intrinsic circuit elements are extracted using exact closed-form equations for both the hybrid-π and the T-topology equivalent circuits. Additionally, a general explicit equation on the total extrinsic elements is derived, subsequently reducing the number of optimization variables. The modeling results are presented, showing that the proposed method can yield a good fit between the measured and calculated S parameters.

RF MOSFET's are usually measured in common source configuration by a 2-port network analyzer, and the common gate and common drain S-parameters cannot be directly measured from a conventional 2-port test structure. In this work, a 4-port test structure for on-wafer measurement of RF MOSFET's is proposed. Four-port measurements for RF MOSFET's in different dimensions and the de-embedded procedures are performed up to 20 GHz. The S-parameters of the RF MOSFET in common source (CS), common gate (CG), and common drain (CD) configurations are obtained from a single DUT and one measurement procedure. The dependence of common source S-parameters of the device on substrate bias are also shown.

This paper presents a dual-band mixer equipped with a dual-band load using current combine technique to minimize chip area by sharing inductors for each frequency band. A systematic design methodology for the current combine load based on parasitic effect considerations is also developed. By following the proposed design procedure, the load inductance and combine capacitance for the dual-band mixer can be easily determined. A 2.4/5.2-GHz CMOS mixer design has been implemented to demonstrate the feasibility of the design technique.

A CMOS low noise amplifier (LNA) for low-power ultra-wideband (UWB) wireless applications is presented. To achieve low power consumption and wide operating bandwidth, the proposed LNA employing stagger tuning technique consists of two stacked common-source stages with different resonant frequencies. This work is implemented in 0.18-µm CMOS process and shows a 2.4-9.4-GHz bandwidth. The amplifier provides a maximum forward gain (S21) of 10.9 dB while drawing 7.1 mW from a 1.8-V supply. A noise figure as low as 4.1 dB and an IIP3 of -3.5 dBm have been demonstrated.

There is increasing interest using CMOS circuits for highly integrated high frequency wireless telecommunications systems. This paper reviews recent works in transceiver architectures, circuits and devices technology for CMOS RFIC application. A number of practical problems those must be resolved in CMOS RFIC design are also discussed.

In this letter, a new computation method for the noise parameters of a linear noisy two-port network is introduced. A new error function, which considers noise figure and source admittance error simultaneously, is proposed to estimate the four noise parameters. The global optimization of the error function is searched directly by using a genetic algorithm.

In this work, a simple method for extracting MOSFET threshold voltage, effective channel length and channel mobility by using S-parameter measurement is presented. In the new method, the dependence between the channel conductivity and applied gate voltage of the MOSFET device is cleverly utilized to extract the threshold voltage, while biasing the drain node of the device at zero voltage during measurement. Moreover, the effective channel length and channel mobility can also be obtained with the same measurement. Furthermore, all the physical parameters can be extracted directly on the modeling devices without relying on specifically designed test devices. Most important of all, only one S-parameter measurement is required for each device under test (DUT), making the proposed extraction method promising for automatic measurement applications.