A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement

Han-Yu CHEN; Kun-Ming CHEN; Guo-Wei HUANG; Chun-Yen CHANG; Tiao-Yuan HUANG

A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement

Han-Yu CHEN, Kun-Ming CHEN, Guo-Wei HUANG, Chun-Yen CHANG, Tiao-Yuan HUANG

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In this work, a simple method for extracting MOSFET threshold voltage, effective channel length and channel mobility by using S-parameter measurement is presented. In the new method, the dependence between the channel conductivity and applied gate voltage of the MOSFET device is cleverly utilized to extract the threshold voltage, while biasing the drain node of the device at zero voltage during measurement. Moreover, the effective channel length and channel mobility can also be obtained with the same measurement. Furthermore, all the physical parameters can be extracted directly on the modeling devices without relying on specifically designed test devices. Most important of all, only one S-parameter measurement is required for each device under test (DUT), making the proposed extraction method promising for automatic measurement applications.

Publication: IEICE TRANSACTIONS on Electronics Vol.E87-C No.5 pp.726-732

Publication Date: 2004/05/01

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Type of Manuscript: Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)

Category: Active Devices and Circuits

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Han-Yu CHEN, Kun-Ming CHEN, Guo-Wei HUANG, Chun-Yen CHANG, Tiao-Yuan HUANG, "A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement" in IEICE TRANSACTIONS on Electronics, vol. E87-C, no. 5, pp. 726-732, May 2004, doi: .
Abstract: In this work, a simple method for extracting MOSFET threshold voltage, effective channel length and channel mobility by using S-parameter measurement is presented. In the new method, the dependence between the channel conductivity and applied gate voltage of the MOSFET device is cleverly utilized to extract the threshold voltage, while biasing the drain node of the device at zero voltage during measurement. Moreover, the effective channel length and channel mobility can also be obtained with the same measurement. Furthermore, all the physical parameters can be extracted directly on the modeling devices without relying on specifically designed test devices. Most important of all, only one S-parameter measurement is required for each device under test (DUT), making the proposed extraction method promising for automatic measurement applications.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e87-c_5_726/_p

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@ARTICLE{e87-c_5_726,
author={Han-Yu CHEN, Kun-Ming CHEN, Guo-Wei HUANG, Chun-Yen CHANG, Tiao-Yuan HUANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement},
year={2004},
volume={E87-C},
number={5},
pages={726-732},
abstract={In this work, a simple method for extracting MOSFET threshold voltage, effective channel length and channel mobility by using S-parameter measurement is presented. In the new method, the dependence between the channel conductivity and applied gate voltage of the MOSFET device is cleverly utilized to extract the threshold voltage, while biasing the drain node of the device at zero voltage during measurement. Moreover, the effective channel length and channel mobility can also be obtained with the same measurement. Furthermore, all the physical parameters can be extracted directly on the modeling devices without relying on specifically designed test devices. Most important of all, only one S-parameter measurement is required for each device under test (DUT), making the proposed extraction method promising for automatic measurement applications.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement
T2 - IEICE TRANSACTIONS on Electronics
SP - 726
EP - 732
AU - Han-Yu CHEN
AU - Kun-Ming CHEN
AU - Guo-Wei HUANG
AU - Chun-Yen CHANG
AU - Tiao-Yuan HUANG
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2004
AB - In this work, a simple method for extracting MOSFET threshold voltage, effective channel length and channel mobility by using S-parameter measurement is presented. In the new method, the dependence between the channel conductivity and applied gate voltage of the MOSFET device is cleverly utilized to extract the threshold voltage, while biasing the drain node of the device at zero voltage during measurement. Moreover, the effective channel length and channel mobility can also be obtained with the same measurement. Furthermore, all the physical parameters can be extracted directly on the modeling devices without relying on specifically designed test devices. Most important of all, only one S-parameter measurement is required for each device under test (DUT), making the proposed extraction method promising for automatic measurement applications.
ER -