Author Search Result

[Author] Hideaki ABE(3hit)

1-3hit
  • A 90-MHz 16-Mb System Integrated Memory with Direct Interface to CPU

    Katsumi DOSAKA  Akira YAMAZAKI  Naoya WATANABE  Hideaki ABE  Jun OHTANI  Toshiyuki OGAWA  Kazunori ISHIHARA  Masaki KUMANOYA  

     
    PAPER-Memory

      Vol:
    E79-C No:7
      Page(s):
    948-956

    This paper describes a system integrated memory with direct interface to CPU which integrates an SRAM, a DRAM, and control circuitry, including a tag memory (TAG). This memory realizes a computer system without glue chips, and thus enables a computer system which is low cost, low power, and compact size, but still with sufficient performance. And fast clock cycle time and access time is realized using a newly proposed clock driver and internal signal generator. This memory is fabricated with a quad-polysilicon double-metal 0.55-µm CMOS process which is the same as used in a conventional 16-Mb DRAM. The chip size of 145.3mm2 is only a 12% increase over the conventional 16-Mb DRAM. The maximum operating frequency is 90-MHz and the operating current at cache-hit is 156-mA. This memory is suitable for various types of computer systems such as personal digital assistants(PDA's), personal computer systems, and embedded controller applications.

  • Parallelization of Quantum Circuits with Ancillae

    Hideaki ABE  Shao Chin SUNG  

     
    PAPER-Quantum Computation

      Vol:
    E86-D No:2
      Page(s):
    255-262

    In this paper, parallelization methods for quantum circuits are studied, where parallelization of quantum circuits means to reconstruct a given quantum circuit to one which realizes the same quantum computation with a smaller depth, and it is based on using additional bits, called ancillae, each of which is initialized to be in a certain state. We propose parallelization methods in terms of the number of available ancillae, for three types of quantum circuits. The proposed parallelization methods are more general than previous one in the sense that the methods are applicable when the number of available ancillae is fixed arbitrarily. As consequences, for the three types of n-bit quantum circuits, we show new upper bounds of the number of ancillae for parallelizing to logarithmic depth, which are 1/log n of previous upper bounds.

  • A Low-Voltage 42.4 G-BPS Single-Ended Read-Modify-Write Bus and Programmable Page-Size on a 3D Frame-Buffer

    Kazunari INOUE  Hideaki ABE  Kaori MORI  Shuji FUKAGAWA  

     
    PAPER

      Vol:
    E83-C No:2
      Page(s):
    195-204

    Various kinds of high bandwidth architecture using the embedded DRAM technology have been presented previously. In most cases, they use wide bus implementation and/or fast bus speed, that both have the penalty of die area and much power consumption at the same time. The proposing single-ended read-modify-write bus increases the bandwidth twice as high, while it maintains the same bus size and the same bus speed. The data-bus comprises 1 k-bit read-bus and 1 k-bit write-bus that each works concurrently, and has amplitude from 0 V to 1 V, hence the measured power consumption is only 0.3 W at a frequency of 166 MHz. A programmable page-size reduces the page miss-rate and efficiently improves the bandwidth that is comparable to the wide bus and fast speed approach. All the proposing features are implemented on a 3D frame-buffer to achieve 42.4 G-BPS bandwidth.

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