This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels (IM) and spurious responses in active and passive applications. This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain. It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.

This paper describes a design and application method of multiple chip module (MCM) technology into microwave applications. An X-Band transmit and receive (T/R) module that has high volume production capability is described. The MMIC chip set designed to achieve multiple functions and state of the arts performance is also described. Peak performance between 8. 5 and 10. 5 GHz includes a power output of 8 W, a noise figure of 6 dB, 23 dB of receive and transmit gains, and a 5-bit phase shifter with less than 5. 5 degree rms phase error. The MCM based module utilizes advanced packaging technique, resulting in a highly integrated and mass production capability.

This paper describes an improved nonlinear GaAs FET model and its parameter extraction procedure for almost all operating conditions such as the small-signal condition, the power saturated condition, and the controlled-resistance condition. The model is capable of modeling the gate voltage dependent drain current and its derivatives in the saturated region as well as the drain voltage dependent drain current and its derivatives in the linear region. The model can take into account the frequency dispersion effects of both transconductance and output conductance. The model describes forward conduction and reverse conduction currents. Deriving the capacitance part of the model from unique charge equations satisfies charge conservation. The model accurately predicts voltage-dependent S-parameters, spurious response in an active condition and inter-modulation response in the controlled-resistance condition of a GaAs FET.

The design and performance of a S-band solid-state power amplifier (SSPA) module are reported. The SSPA module consisted from four MMIC power amplifiers (PA) achieves 90 W output power, 35% power added efficiency (PAE), and 80% power combine efficiency. The MMIC PA achieves over 28 W output power, 25 dB small signal gain, and over 38% PAE. This paper also describes the large-signal circuit design for the MMIC PA using an improved nonlinear FET model developed for high power amplifier applications.