Author Search Result

[Author] Koji ABE(2hit)

1-2hit
  • Recognition of Plural Grouping Patterns in Trademarks for CBIR According to the Gestalt Psychology

    Koji ABE  Hiromasa IGUCHI  Haiyan TIAN  Debabrata ROY  

     
    PAPER-Vision and Image

      Vol:
    E89-D No:6
      Page(s):
    1798-1805

    According to the Gestalt principals, this paper presents a recognition method of grouping areas in trademark images modeling features for measuring the attraction degree between couples of image components. This investigation would be used for content-based image retrieval from the view of mirroring human perception for images. Depending on variability in human perception for trademark images, the proposed method finds grouping areas by calculating Mahalanobis distance with the features to every combination of two components in images. The features are extracted from every combination of two components in images, and the features represent proximity, shape similarity, and closure between two components. In addition, changing combination of the features, plural grouping patterns are output. Besides, this paper shows the efficiency and limits of the proposed method from experimental results. In the experiments, 104 participants have perceived grouping patterns to 74 trademark images and the human perceptions have been compared with outputs by the proposed method for the 74 images.

  • Reduced Peripheral Leakage Current in Pin Photodetectors of Ge on n+-Si by P+ Implantation to Compensate Surface Holes Open Access

    Koji ABE  Mikiya KUZUTANI  Satoki FURUYA  Jose A. PIEDRA-LORENZANA  Takeshi HIZAWA  Yasuhiko ISHIKAWA  

     
    BRIEF PAPER

      Pubricized:
    2024/05/15
      Vol:
    E107-C No:9
      Page(s):
    237-240

    A reduced dark leakage current, without degrading the near-infrared responsivity, is reported for a vertical pin structure of Ge photodiodes (PDs) on n+-Si substrate, which usually shows a leakage current higher than PDs on p+-Si. The peripheral/surface leakage, the dominant leakage in PDs on n+-Si, is significantly suppressed by globally implanting P+ in the i-Si cap layer protecting the fragile surface of i-Ge epitaxial layer before locally implanting B+/BF2+ for the top p+ region of the pin junction. The P+ implantation compensates free holes unintentionally induced due to the Fermi level pinning at the surface/interface of Ge. By preventing the hole conduction from the periphery to the top p+ region under a negative/reverse bias, a reduction in the leakage current of PDs on n+-Si is realized.

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