To meet the demand for light sources for on-chip optical interconnections, we demonstrate the continuous-wave (CW) operation of photonic-crystal (PhC) nanocavity lasers at up to 89.8 by using InP buried heterostructures (BH). The wavelength of a PhC laser can be precisely designed over a wide range exceeding 100 nm by controlling the lattice constant of the PhC. The dynamic responses of the PhC laser are also demonstrated with a 3-dB bandwidth of over 7.0 GHz at 66.2. These results reveal the laser's availability for application to wavelength division multiplexed (WDM) optical interconnection on CMOS chips. We discuss the total bandwidths of future on-chip optical interconnections, and report the capabilities of PhC lasers.

We have developed membrane distributed Bragg reflector (DBR) lasers on thermally oxidized Si substrate (SiO2/Si substrate) to evaluate the parameters of the on-Si lasers we have been developing. The lasers have InGaAsP-based multi-quantum wells (MQWs) grown on InP substrate. We used direct bonding to transfer this active epitaxial layer to SiO2/Si substrate, followed by epitaxial growth of InP to fabricate a buried-heterostructure (BH) on Si. The lateral p-i-n structure was formed by thermal diffusion of Zn and ion implantation of Si. For the purpose of evaluating laser parameters such as internal quantum efficiency and internal loss, we fabricated long-cavity lasers that have 200- to 600-µm-long active regions. The fabricated DBR lasers exhibit threshold currents of 1.7, 2.1, 2.8, and 3.7mA for active-region lengths of 200, 300, 400, and 600µm, respectively. The differential quantum efficiency also depends on active-region length. In addition, the laser characteristics depend on the distance between active region and p-doped region. We evaluated the internal loss to be 10.2cm-1 and internal quantum efficiency to be 32.4% with appropriate doping profile.

An ultra-compact InGaAs photodetector (PD) is demonstrated based on a photonic crystal (PhC) waveguide to meet the demand for a photoreceiver for future dense photonic integration. Although the PhC-PD has a length of only 1.7µm and a capacitance of less than 1fF, a high responsivity of 1A/W was observed both theoretically and experimentally. This low capacitance PD allows us to expect a resistor-loaded receiver to be realized that requires no electrical amplifiers. We fabricated a resistor-loaded PhC-PD for light-to-voltage conversion, and demonstrated a kV/W efficiency with a GHz bandwidth without using amplifiers. This will lead to a photoreceiver with an ultralow energy consumption of less than 1fJ/bit, which is a step along the road to achieving a dense photonic network and processor on a chip.