We newly propose an optical coherence domain reflectometry for optical subscriber networks with measurement range enhancement. This reflectometry is based on our own technique to synthesize an optical coherence function. An optical switch after a light source generates optical pulses, which select the measuring region, in which one coherence peak is scanned with high spatial resolution. An optical fiber loop delay line including a frequency shifter is placed in a reference-path of the interferometer. In this method, the measuring region could be easily changed by the hetelodyne intermediate frequency selected at the electronic band pass filter. In the basic experiments, the reflections at 5 km distance are measured with a spatial resolution of 8 cm, and the change of the measuring region is successfully demonstrated.

We review our recent work on Yb-doped and hybrid-structured solid photonic bandgap fibers (Yb-HS-SPBGFs) for linearly-polarized fiber lasers oscillating in the small gain wavelength range from 1160 nm to 1200 nm. The stack-and-draw or pit-in-jacket method is employed to fabricate two Yb-HS-SPBGFs. Both of the fiber shows optical filtering property for eliminating ASE in the large gain wavelength range from 1030 nm to 1130 nm and enough high birefringence for maintaining linear polarization, thanks to the photonic bandgap effect and the induced birefringence of the hybrid structure. The fiber attenuation of the Yb-HS-SPBGF fabricated by the pit-in-jacket method is much lower than that of the Yb-HS-SPBGF fabricated by stack-and-draw method. Linearly-polarized single stage fiber lasers using Yb-HS-SPBGFs are also demonstrated. Laser oscillation at 1180 nm is confirmed without parasitic lasing in the fiber lasers. High output power and high slope efficiency in linearly-polarized single-cavity fiber laser using the low-loss Yb-HS-SPGF fabricated by the pit-in-jacket method are achieved. Narrow linewidth, high polarization extinction ratio and high beam quality are also confirmed, which are required for high-efficient frequency-doubling. A compact and high-power yellow-orange frequency-doubling laser would be realized by using a linearly-polarized single-cavity fiber laser employing a low-loss Yb-HS-SPBGF.

If a perspective of the "256M/1G era" were to be made from this present, namely the last stage of the development of 64 M DRAMs, the process technologies will show a variety of progress. Some of them would remain only in the extension of the present ones, but others would show a fundamental change including their technological constitutions. The optical lithography will survive even the "256M/1G era" mainly with the innovations of mask technologies. The etching technologies will remain basically the same as the present ones, but will be much more refined. The studies on plasma/redical related surface reactions, however, will bring a variety of surface treatment technologies of new function. The interconnection technologies will encounter various kinds of difficulties both in materials and in processign, and mechanical processing will become one of ULSI processing technologies. The shallow junction technology will merge with the metallization and epitaxial growth technology. The thin dielectrics will approach a critical situation, and it might enhance the device structural change to three dimensional ones. Corresponding to this, the necessity of "vertical processing" will become larger. The bonding SOI technology might overcome these situations of increasing difficulties. On the other hand, the contamination control will be the base of these technology innovations and improvements, exploring a new technology field in addition to the conventional process technology fields.