The origin of and a method of enhancing the Optical Beam Induced Resistance Change (OBIRCH) signal for defect observation in VLSI metal interconnections is discussed based on a numerical analysis of three-dimensional thermal conduction and experimental results. The numerical analysis shows that the OBIRCH signal originates from a slight increase in the resistance of the metal line caused by laser beam heating and that its effect is influenced by the temperature of the metal layer. Both simulations and experimental results suggest that cooling the sample is preferable to detect the OBIRCH signal. The decrease in the total resistance of the metal line without any change in the amount of the resistance increase under laser illumination is found to be the main cause of the OBIRCH signal enhancement under low temperature measurement.

This paper presents the effect of stress on device degradation in metal-oxide-semiconductor field-effect transistors (MOSFETs) due to stud bumping. Stud bumping above the MOSFET region generates interface traps at the Si/SiO2 interface and results in the degradation of transconductance in N-channel MOSFETs. The interface traps are apparently eliminated by both nitrogen and hydrogen annealing. However, the hot-carrier immunity after hydrogen annealing is one order of magnitude stronger than that after nitrogen annealing. This effect is explained by the termination of dangling bonds with hydrogen atoms.