A 60-GHz-band monolithic HEMT amplifier for which BCB thin film layers are adopted on GaAs substrate has been developed. The MMIC utilized a thin film microstrip line for the bias circuit and a coplanar waveguide for the RF circuit. The coplanar waveguide has the advantage of low loss, whereas the thin film microstrip line has the advantage of small size. Two different types of transmission lines were selected to coexist in the monolithic amplifier. As a result, the MMIC achieved high gain over a wider frequency range at a small size. This MMIC had a gain of over 15 dB in a frequency bandwidth of 11 GHz. In particular, the high-frequency characteristics of the transmission lines and the HEMTs were evaluated in detail for the conventional MMIC structure and the new MMIC structure. It was confirmed that this newly developed MMIC using BCB thin film layers is attractive for millimeter-wave applications.

The authors have developed V-band high electron mobility transistor (HEMT) MMICs adopting benzo-cyclo-butene (BCB) thin-film layers on GaAs substrates. Since the BCB thin-film layers, which can change the thickness of arbitrary parts on a circuit, are used for these MMICs, both a thin-film microstrip (TFMS) line, offering the advantages of great flexibility in layout and small size, and a coplanar waveguide (CPW), offering the advantage of low loss, can be used according to the purpose of the MMIC. Here we introduce the four types of V-band MMICs that we fabricated: low noise amplifier (LNA), mixer, voltage controlled oscillator (VCO), and power amplifier (PA). The optimum transmission lines were chosen from the TFMS line and the CPW for these MMICs. Miniaturization of the LNA MMIC and the mixer MMIC were attained by adopting the TFMS line, whereas adoption of the CPW enabled the VCO MMIC to achieve high performance. These results indicate that it is important to choose the optimum transmission line according to the purpose of the circuit function for each MMIC. It was confirmed that these newly developed MMICs using the BCB thin-film dielectric layers are attractive for millimeter-wave applications.

Among the many fabrication methods for oxide superconductor films, metal organic chemical vapor deposition (MOCVD) is particularly suitable for industrial application because of its mass productivity and the low growth temperature. Therefore we have studied this technique using the horizontal cold wall furnace type MOCVD method to obtain high quality superconducting films. As the result, we have succeeded in fabricating YBa2Cu3Oy films which have high critical temperatures (over 80 K) under substrate temperatures as low as 700 without post-annealing. But, in the course of our experiments, it was found that the thicknesses of YBa2Cu3Oy films fabricated by MOCVD were not uniform. The cause of this non-uniformity is believed to be that the deposition rate exponentially falls off along the flow direction because of the decrease of the source gas concentration through the reaction. In this paper, this non-uniformity is analytically studied. It is shown that the deposition rate decrease can be controlled with a tapered inner tube, and that these theoretical results are in good agreement with the results of experiment. In addition, it is indicated that the superconducting property of the films has less dependence on substrate position as a result of the tapered inner tube.