A novel K-band MMIC frequency doubler has been developed using resistive series feedback circuit. The doubler exhibits much better D/U ratio, smaller output power variation against ambient temperature and lower power consumption than those of the conventional single-ended doubler. This paper presents the simulation results on the effect of the resistive series feedback by harmonic balance methods. To obtain practical and accurate simulation results, newly developed gate charge model for Cgs and Cgd is introduced. The fabricated result of the proposed MMIC is also demonstrated.

A 60-GHz-band monolithic HEMT amplifier for which BCB thin film layers are adopted on GaAs substrate has been developed. The MMIC utilized a thin film microstrip line for the bias circuit and a coplanar waveguide for the RF circuit. The coplanar waveguide has the advantage of low loss, whereas the thin film microstrip line has the advantage of small size. Two different types of transmission lines were selected to coexist in the monolithic amplifier. As a result, the MMIC achieved high gain over a wider frequency range at a small size. This MMIC had a gain of over 15 dB in a frequency bandwidth of 11 GHz. In particular, the high-frequency characteristics of the transmission lines and the HEMTs were evaluated in detail for the conventional MMIC structure and the new MMIC structure. It was confirmed that this newly developed MMIC using BCB thin film layers is attractive for millimeter-wave applications.