1-2hit |
Hisayuki HIGUCHI Suguru TACHIBANA Masataka MINAMI Takahiro NAGANO
Low-power, high-speed match-detection circuits for a content addressable memory(CAM) are proposed and evaluated. The circuits consist a current supply to a match-line, a differential amplifier, and 9-MOSFET CAM cells. The implementation of these circuits made it possible to realize a 16-entry, 32-bit data-compare CAM TEG of 1.2-ns matchdetection time with 5-mW power dissipation in 10-ns cycle-time.
Suguru TACHIBANA Hisayuki HIGUCHI Koichi TAKASUGI Katsuro SASAKI Toshiaki YAMANAKA Yoshinobu NAKAGOME
The dual-sensing-latch circuit proposed here can solve the synchronization problem of the conventional wave-pipelined SRAM, and the proposed source-biased self-resetting circuit reduces both the cycle and access time of cache SRAM's. A 16-kb SRAM using these circuit techniques was designed, and was fabricated with 0.25-µm CMOS technology. Simulation results indicate that this SRAM has a typical clock access time of 2.6 ns at 2.5-V supply voltage and a worst minimum cycle time of 2.6 ns.