We have developed a GaAs direct-conversion π/4 shifted QPSK modulator IC equipped with variable attenuators for controlling the output power level of the 1.9 GHz Personal Handy Phone system in Japan (PHS). The IC was successfully demonstrated showing state-of-the-art performance with the image rejection ratio of more than 36 dBc at a low input power of -10 dBm in 1.9 GHz frequency range. By using the "Gate Current Control method by Pull-down FET's" (GCCPF), the equipped attenuators vary the output power from 0 dB to -28 dB by 4 dB step. The IC operates at a 2.7 V supply with power dissipation of 259 mW. The 2.64.6 mm2 chip with about 400 elements was fabricated by a 0.5 µm WNx-gate BPLDD GaAs MESFET process.

We propose two types of active directional couplers to assure high TX cancellation: an asymmetric type and a symmetric type. For attaining low receiving through loss, coupling capacitors used in conventional couplers are replaced by amplifiers in the proposed active directional couplers. The asymmetric active directional coupler is composed of a small number of components and simple structure. The symmetric active directional coupler has wide-bandwidth TX cancellation. Measurement results show that receiving through loss of -5.3 dB and the TX cancellation of -67.6 dB are obtained in the asymmetric active directional coupler, and receiving through loss of -6.7 dB and the TX cancellation of -66.4 dB are obtained in the symmetric active directional coupler. Compared to the asymmetric active directional coupler, the symmetric active directional coupler has advantage of wider bandwidth of 1.25 MHz to reduce TX leakage of less than -55 dB. Both the proposed active directional couplers achieve high TX cancellation, and the symmetric active directional coupler can be applied in a UHF RFID system with 10-m communication range.

This paper describes a low-power-supply 2-GHz CMOS up-converter. A current-mode mixing method using current adding and self-switching mixers is proposed for 1-V operation. The current-mode up-converter achieves conversion gain of 6.7 dB and linearity of 6.5-dBm OIP3 at 1 V. Balanced configuration and DC offset canceller reduce LO leakage below -40 dBc even with 20-mV Vth mismatches. The bias circuit of the IC is designed to maintain constant conversion gain for variation of temperature for practical usage. The measurement results indicate the proposed up-converter is applicable for future wireless systems.